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Discussion Session 1 (Lectures 1a, 1b and 2)
08 Sep 2010 | | Contributor(s):: Supriyo Datta
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Lecture 2: Quantum of Conductance: Resistance and uncertainty
08 Sep 2010 |
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Local density of states
17 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
The concept of general density of states (DOS) in devices is, by definition, spatially invariant. However, in the case of inhomogeneous materials or in quantum confined structures, the density of states can be resolved in space. This is known as local density of states, or LDOS. …
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Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of the NEMO1D project in 1994. The modeling tool NEMO was created at Texas Instruments to fundamentally...
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ECE 656 Lecture 4: Density of States - Density of Modes
14 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Density of states Example: graphene Density of modes Example: graphene Summary
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ME 597 Lecture 2: Electron States in Solids-Density of States
09 Sep 2009 | | Contributor(s):: Ron Reifenberger
Note: This lecture has been revised since its original presentation.Topics:Electron States in Solids – Bloch FunctionsKronig-Penney ModelDensity of States
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SIESTA
05 Mar 2008 | | Contributor(s):: Lucas Wagner, Jeffrey C Grossman, Joe Ringgenberg, daniel richards, Alexander S McLeod, Eric Isaacs, Jeffrey B. Neaton
Use SIESTA to perform electronic structure calculations
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ECE 659 Lecture 42: Summing Up
04 May 2009 | | Contributor(s):: Supriyo Datta
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ECE 606 Lecture 8: Density of States
04 Feb 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Calculation of density of statesDensity of states for specific materialsCharacterization of Effective MassConclusions
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Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States
04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan
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ECE 495N Lecture 25: Density of Modes
05 Nov 2008 | | Contributor(s):: Supriyo Datta
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ECE 495N Lecture 24: Subbands
05 Nov 2008 | | Contributor(s):: Supriyo Datta
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ECE 495N Lecture 23: Density of States II
05 Nov 2008 | | Contributor(s):: Supriyo Datta
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ECE 495N Lecture 22: Density of States I
05 Nov 2008 | | Contributor(s):: Supriyo Datta
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Thermoelectric Power Factor Calculator for Nanocrystalline Composites
18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions
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Notes on Fermi-Dirac Integrals (4th Edition)
23 Sep 2008 | | Contributor(s):: raseong kim, Xufeng Wang, Mark Lundstrom
Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties.We also present Matlab functions (in a zipped...
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Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
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Lecture 1A: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
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Lecture 1B: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
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Computational Electronics HW - DOS and Fermi Golden Rule
11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF