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Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in...
A UCSD analytic TFET model
18 Dec 2015 | Downloads | Contributor(s): Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...
Venu Madhava Rao S.P.
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Papers | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...
Dhawal Dilip Mahajan
Silvaco Athena - Part 3
09 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.
Device Parameters Extraction Within Silvaco Simulation Software
30 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of slides explains the extract statements within SILVACO simulation software.
2011 NCN@Purdue Summer School: Electronics from the Bottom Up
20 Jul 2011 | Workshops
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Alumni Discussion Group: LinkedIn
Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems
20 Jul 2011 | Online Presentations | Contributor(s): J. L. Gray
Modeling and simulation play an important role in designing and
optimizing PV systems. This tutorial is a broad overview of the topic
including a look at detailed, numerical device simulation.