Tags: device modelling and simulation

Downloads (1-6 of 6)

  1. A UCSD analytic TFET model

    18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur

    A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

  2. PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)

    29 May 2014 | | Contributor(s):: Bryan M. Wong

    PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.

  3. SPICE Model of Graphene Nanoribbon FETs (GNRFET)

    12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen

    This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...

  4. NEMO5 Tutorials

    05 Jun 2012 | | Contributor(s):: James Fonseca

    Crystal OrientationsVisualizationTransportsUploaded June 5, 2012

  5. NEMO5 Tutorials

    05 Jun 2012 | | Contributor(s):: James Fonseca

    Crystal OrientationsVisualizationTransportsUploaded June 5, 2012

  6. Real space first-principles semiempirical pseudopotentials for Fe/MgO/Fe

    03 Dec 2008 | | Contributor(s):: Kirk Bevan

    A set of semiempirical pseudopotentials for the atomistic modeling of Fe/MgO/Fe tunnel junctions. See the attached document for a full description of their derivation and the modeling approach.Document Abstract:We present a real space density functional theory (DFT) localized basis set...