A UCSD analytic TFET model
18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)
29 May 2014 | | Contributor(s):: Bryan M. Wong
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.
SPICE Model of Graphene Nanoribbon FETs (GNRFET)
12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...
05 Jun 2012 | | Contributor(s):: James Fonseca
Crystal OrientationsVisualizationTransportsUploaded June 5, 2012
Real space first-principles semiempirical pseudopotentials for Fe/MgO/Fe
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03 Dec 2008 | | Contributor(s):: Kirk Bevan
A set of semiempirical pseudopotentials for the atomistic modeling of Fe/MgO/Fe tunnel junctions. See the attached document for a full description of their derivation and the modeling approach.Document Abstract:We present a real space density functional theory (DFT) localized basis set...