Tags: device modelling and simulation

Resources (1-20 of 73)

  1. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

    The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

  2. Chapter 1: A Primer MOSCap Tool on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed

    The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...

  3. Electron Transport in Schottky Barrier CNTFETs

    24 Oct 2017 | | Contributor(s):: Igor Bejenari

    This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...

  4. Atomistic Modeling of Nano Devices: From Qubits to Transistors

    13 Apr 2016 | | Contributor(s):: Rajib Rahman

    In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

  5. A UCSD analytic TFET model

    18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur

    A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

  6. PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)

    29 May 2014 | | Contributor(s):: Bryan M. Wong

    PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.

  7. Tunnel FET Learning Tutorial

    05 Mar 2014 | | Contributor(s):: Mark Cheung

    This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results

  8. [Illinois] Interdisciplinary Symposium on Advanced Nano/Biosystems (Design, Fabrication, and Characterization)

    17 Dec 2013 |

    The Interdisciplinary Symposium on Advanced Nano/Biosystems: Design, Fabrication, and Characterization aims to provide a stimulating discussing forum for recent advances in material design, fabrication and characterization techniques, including experiments, theories, computations, and modeling....

  9. SPICE Model of Graphene Nanoribbon FETs (GNRFET)

    12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen

    This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...

  10. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

  11. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  12. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  13. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

  14. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

  15. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  16. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  17. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  18. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | | Contributor(s):: Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  19. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  20. Landauer Approach to Thermoelectrics

    23 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...