a TCAD Lab
Introduction to TCAD Simulation
The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software.
Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
Chapter 1: A Primer MOSCap Tool on nanoHUB.org
19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed
The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...
HERACLIO HEREDIA URETA
MD YASIR BASHIR
Shailesh M. Keshkamat
What should be measurement for zener diode simulation in TCAD?
Closed | Responses: 1
I'm an electronics engineering student working on semiconductor device simulation using VisualTCAD software in my institute.
I design pn junction successfully with...
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
SANJAY KUMAR JANA
Shaik Jani Babu
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Jan 28 2016
nanoBIO node Webinar Series (Nanosystems Functionalization Modeling and Simulation)
A UCSD analytic TFET model
18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...