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2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...
What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?
Closed | Responses: 0
How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction??
How to view this intuitively ??
Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??
Open | Responses: 1
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
Colloquium on Graphene Physics and Devices
22 Sep 2009 | Courses | Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
EXPERTISEAdvanced Nano-device Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
Dhawal Dilip Mahajan
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...
ECE 606 Lecture 10: Additional Information
0.0 out of 5 stars
16 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Potential, field, and charge
E-k diagram vs. band-diagram
Basic concepts of donors and acceptors
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on...
ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations
30 Sep 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 11: Equilibrium Statistics
Law of mass-action & intrinsic concentration
Statistics of donors and acceptor levels
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid...
ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 12: Equilibrium Concentrations
Temperature dependence of carrier concentration
Multiple doping, co-doping, and heavy-doping
R. F. Pierret, "Advanced Semiconductor Fundamentals",...
ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion
ECE 606 Lecture 13: Solutions of the Continuity Equations - Analytical & Numerical
12 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck