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2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?
Closed | Responses: 0
How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction??
How to view this intuitively ??
Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??
Open | Responses: 1
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Colloquium on Graphene Physics and Devices
22 Sep 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...
Dhawal Dilip Mahajan
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
ECE 606 Lecture 10: Additional Information
out of 5 stars
16 Feb 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Potential, field, and chargeE-k diagram vs. band-diagramBasic concepts of donors and acceptorsConclusion
ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations
30 Sep 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 11: Equilibrium Statistics
Outline:Law of mass-action & intrinsic concentration Statistics of donors and acceptor levelsConclusion
ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 12: Equilibrium Concentrations
Outline:Carrier concentrationTemperature dependence of carrier concentrationMultiple doping, co-doping, and heavy-dopingConclusion
ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion