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Intro to MOS-Capacitor Tool
0.0 out of 5 stars
23 Jul 2013 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential...
Katie M Smith
Landauer Approach to Thermoelectrics
23 Jun 2013 | Papers | Contributor(s): Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
NBTI interpreted by R-D model
The act of measurement and observed quantity
NBTI vs. Light-induced Degradation
Possibility of Degradation-free...
Lecture 7: On Reliability and Randomness in Electronic Devices
14 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 9: Breakdown in Thick Dielectrics
05 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Breakdown in gas dielectric and Paschen’s law
Spatial and temporal dynamics during breakdown
Breakdown in bulk oxides: puzzle
Theory of pre-existing defects: Thin oxides
Marcelo Kuroda received his B.S. in Physics in 2002 from the University of Buenos Aires in Argentina and Ph.D. program in Physics at the University of Illinois – Urbana Champaign in 2009....
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | Courses | Contributor(s): Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | Papers | Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...
Physics of Current and Future Devices
27 Jun 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This set of powerpoint slides is part of a series Nanoelectronics and Modeling at the Nanoscale. It gives a glimpse on effects that occur in current and future nanoscale devices that have to be...
Podolskaya I. Natalie
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...
Quantum Workshop III: LED Circuit and Device Physics
07 Feb 2015 | Teaching Materials | Contributor(s): Stella Quinones
A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit. Students explore the photon energy of four LEDs, compare the...
Real space first-principles semiempirical pseudopotentials for Fe/MgO/Fe
3.0 out of 5 stars
03 Dec 2008 | Downloads | Contributor(s): Kirk H. Bevan
A set of semiempirical pseudopotentials for the atomistic modeling of Fe/MgO/Fe tunnel junctions. See the attached document for a full description of their derivation and the modeling...
Semiconductor Device Theory Exercises
17 Feb 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom
This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level.
Crystal lattices and Miller indicies