Tags: device physics

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  1. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...

  2. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  3. Jamie Teherani

    James Teherani joined Columbia University as anassistant professor in the Department of Electrical Engineering in 2015. He received his BS in electrical and computer engineering from the...

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  4. Jeronimo Peralta

    PhD in Physics, University of Buenos AiresResearcher in transport phenomena, device physics.

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  5. Katie M Smith

    https://nanohub.org/members/38245

  6. Landauer Approach to Thermoelectrics

    21 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  7. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  8. Lecture 7: On Reliability and Randomness in Electronic Devices

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationPrinciples of reliability physicsClassification of Electronic ReliabilityStructure Defects in Electronic MaterialsConclusions

  9. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

  10. Lecture 9: Breakdown in Thick Dielectrics

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  11. Leyla Başak Büklü

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  12. Marcelo Kuroda

    Marcelo Kuroda received his B.S. in Physics in 2002 from the University of Buenos Aires in Argentina and Ph.D. program in Physics at the University of Illinois – Urbana Champaign in 2009. In...

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  13. Nadim Chowdhury

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  14. Nanoscale MOSFETS: Physics, Simulation and Design

    27 Jun 2013 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  15. Nanostructured Electronic Devices: Percolation and Reliability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  16. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    25 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...

  17. Physics of Current and Future Devices

    27 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This set of powerpoint slides is part of a series Nanoelectronics and Modeling at the Nanoscale. It gives a glimpse on effects that occur in current and future nanoscale devices that have to be properly captured with appropriate physical models.

  18. Podolskaya I. Natalie

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  19. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    26 Jun 2013 | | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

  20. Quantum Workshop III: LED Circuit and Device Physics

    05 Feb 2015 | | Contributor(s):: Stella Quinones

    A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit.  Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...