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Illinois Tools: Basic Bulk Silicon Transport Data at 300K
27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan
Calculations of doped bulk silicon transport data (new version release)
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
26 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...
Intro to MOS-Capacitor Tool
09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
Katie M Smith
Landauer Approach to Thermoelectrics
21 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
Lecture 10: Interface Damage & Negative Bias Temperature Instability
29 Jul 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions
Lecture 7: On Reliability and Randomness in Electronic Devices
Outline:Background informationPrinciples of reliability physicsClassification of Electronic ReliabilityStructure Defects in Electronic MaterialsConclusions
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
Lecture 9: Breakdown in Thick Dielectrics
Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions
Leyla Başak Büklü
Nanoscale MOSFETS: Physics, Simulation and Design
27 Jun 2013 | | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Nanostructured Electronic Devices: Percolation and Reliability
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
25 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...
Physics of Current and Future Devices
27 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of powerpoint slides is part of a series Nanoelectronics and Modeling at the Nanoscale. It gives a glimpse on effects that occur in current and future nanoscale devices that have to be properly captured with appropriate physical models.
Podolskaya I. Natalie
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
26 Jun 2013 | | Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...