Tags: device physics

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  1. ECE 606: Principles of Semiconductor Devices

    12 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid...

  2. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

  3. Harish Mallikarjun Kittur

    https://nanohub.org/members/44085

  4. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 1 Introduction

    26 Nov 2008 | | Contributor(s):: Eric Pop

    Introduction to Solid State Electronic Devices

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias

    30 Oct 2009 | | Contributor(s):: Eric Pop

    Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

    04 Mar 2010 | | Contributor(s):: Eric Pop

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    03 Mar 2010 | | Contributor(s):: Eric Pop

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    03 Mar 2010 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    03 Mar 2010 | | Contributor(s):: Eric Pop

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    03 Mar 2010 | | Contributor(s):: Eric Pop

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    03 Mar 2010 | | Contributor(s):: Eric Pop

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 2: Crystal Lattices

    14 Aug 2008 | | Contributor(s):: Eric Pop

    Crystal Lattices:Periodic arrangement of atomsRepeated unit cells (solid-state)Stuffing atoms into unit cellsDiamond (Si) and zinc blende (GaAs)crystal structuresCrystal planesCalculating densities

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Discussion of scaleReview of atomic structureIntroduction to energy band model

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 4: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Energy Bands and CarriersBand gaps (lattice and temperature dependence)Band curvatureCarrier effective mass

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States

    04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations

    30 Dec 2008 | | Contributor(s):: Eric Pop

  18. Illinois ECE 440: Solid State Electronic Devices

    18 Aug 2008 | | Contributor(s):: Eric Pop

    The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic...

  19. Illinois ECE 440: Solid State Electronic Devices Homework Assignments (Fall 2009)

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    Homework assignments for the Fall 2009 teaching of Illinois ECE 440: Solid State Electronic Devices.

  20. Illinois Tools: Basic Bulk Silicon Transport Data at 300K

    27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan

    Calculations of doped bulk silicon transport data (new version release)