Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

All Categories (1-20 of 328)

  1. Jul 20 2009

    2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...

    https://nanohub.org/events/details/231

  2. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  3. 2010 NCN Annual Review S13: External Education - Cal Poly Pomona

    16 Jun 2010 | | Contributor(s):: Tanya Faltens

  4. 2011 NCN@Purdue Summer School: Electronics from the Bottom Up

    20 Jul 2011 |

    click on image for larger versionAlumni Discussion Group: LinkedIn

  5. A Primer on Semiconductor Device Simulation

    23 Jan 2006 | | Contributor(s):: Mark Lundstrom

    Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...

  6. Abhijith Prakash

    https://nanohub.org/members/35214

  7. Active Photonic Nanomaterials: From Random to Periodic Structures

    06 Feb 2006 | | Contributor(s):: Hui Cao

    Active photonic nanomaterials, which have high gain or large nonlinearity, are essential to the development of nanophotonic devices and circuits. In this talk, I will provide a review of our recent research activities related to the fabrication of active photonic nanomaterials and the...

  8. All-Spin Logic Devices

    08 Feb 2010 | | Contributor(s):: Behtash Behinaein

    We propose a spintronic device that uses spin at every stage of its operation: input and output information are represented by the magnetization of nanomagnets which communicate through spin-coherent channels. Based on simulations with an experimentally benchmarked model we argue that the device...

  9. An Electrical Engineering Perspective on Molecular Electronics

    26 Oct 2005 | | Contributor(s):: Mark Lundstrom

    After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of...

  10. Analysis of DC Electrical Conductivity Models of Carbon Nanotube-Polymer Composites with Potential Application to Nanometric Electronic Devices

    09 Mar 2013 | | Contributor(s):: Rafael Vargas-Bernal, Gabriel Herrera-Pérez, Ma. Elena Calixto-Olalde, Margarita Tecpoyotl-Torres

    The design of nanometric electronic devices requires novel materials for improving their electrical performance from stages of design until their fabrication. Until now, several DC electrical conductivity models for composite materials have been proposed. However, these models must be valued to...

  11. Ashish Agrawal

    https://nanohub.org/members/28577

  12. Ashutosh Manohar

    https://nanohub.org/members/128102

  13. Atomic Force Microscopy

    01 Dec 2005 | | Contributor(s):: Arvind Raman

    Atomic Force Microscopy (AFM) is an indispensible tool in nano science for the fabrication, metrology, manipulation, and property characterization of nanostructures. This tutorial reviews some of the physics of the interaction forces between the nanoscale tip and sample, the dynamics of the...

  14. Atomistic Alloy Disorder in Nanostructures

    26 Feb 2007 | | Contributor(s):: Gerhard Klimeck

    Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and discrete states. But what if the material is fundamentally disordered? What if the disorder is at the...

  15. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | | Contributor(s):: Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...

  16. Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

    22 Sep 2016 | | Contributor(s):: Jamie Teherani

    Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

  17. Bandstructure in Nanoelectronics

    01 Nov 2005 | | Contributor(s):: Gerhard Klimeck

    This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...

  18. BJT Lab: h-Parameters Calculation Exercise

    30 Jun 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...

  19. BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices

    23 Apr 2007 | | Contributor(s):: David Janes

    This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.

  20. Chemical Modification of GaAs with TAT Peptide and Alkylthiol Self-Assembled Monolayers

    03 Aug 2006 | | Contributor(s):: Hamsa Jaganathan

    The use of self-assembled monolayers (SAM) on semiconductors creates a basis for the design and creation of bioelectronics, such as biosensors. The interface between the surface and an organic monolayer can change significant electrical and physiochemical properties of a biological device....