Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

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1. Optical BioMEMS Microfluidic Technologies for Hand-Held, Point-of-Care, Medical Devices

   23 Nov 2009 | | Contributor(s):: James Leary

   Portable, point-of-care, medical diagnostic devices could provide an important new component in more cost-effective healthcare delivery. Rapid measurements of blood samples during an examination within a doctor’s office or in the field, could allow immediate appropriate treatment of medical...

2. Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias

   18 Nov 2009 | | Contributor(s):: Eric Pop

   Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.

3. Illinois ECE 440 Solid State Electronic Devices, Lecture 19: Current Flow in P-N Diode

   28 Oct 2009 | | Contributor(s):: Eric Pop

   Last time, we talked about unbiased p-n junction.Today: biased (Vext ≠ 0) p-n junction & current flow

4. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

   27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

   Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions

5. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

   27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

   Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna

6. Illinois ECE 440 Solid State Electronic Devices, Lecture 18: P-N Diode Electrostatics

   22 Oct 2009 | | Contributor(s):: Eric Pop

   Last time, we talked about p-n junction built-in voltage V¬0.Today: more about p-n electrostatics.

7. Illinois ECE 440 Solid State Electronic Devices, Lecture 16-17: Diffusion

   22 Oct 2009 | | Contributor(s):: Eric Pop

   So far:•Energy bands, Doping, Fermi levels•Drift (~n*v), diffusion (~dn/dx)•Einstein relationship (D/μ = kT/q)•“Boring” semiconductor resistors (either n- or p-type)•Majority/minority carriers with illuminationToday, our first “useful” device:•The P-N junction diode in equilibrium (external...

8. Illinois ECE 440 Solid State Electronic Devices, Lecture 14-15: Diffusion with Recombination

   08 Oct 2009 | | Contributor(s):: Eric Pop

   •Diffusion with recombination•The diffusion length (distance until they recombine)

9. Illinois ECE 440 Solid State Electronic Devices, Lecture 13: Diffusion

   02 Oct 2009 | | Contributor(s):: Eric Pop

   ECE 440: Lecture 13Diffusion Current

10. Illinois ECE 440 Solid State Electronic Devices, Lecture 12: Quasi-Fermi Levels; Photoconductivity

    out of 5 stars 

    05 Jan 2009 | | Contributor(s):: Eric Pop

11. Illinois ECE 440 Solid State Electronic Devices, Lecture 10-11: Optical Absorption and Direct Recombination

    out of 5 stars 

    30 Sep 2009 | | Contributor(s):: Eric Pop

12. Illinois ECE 440 Solid State Electronic Devices, Lectures 8 and 9: Drift Mobility

    out of 5 stars 

    02 Jan 2009 | | Contributor(s):: Eric Pop

    Carrier Mobility and DriftECE 440: Lectures 8-9Carrier Mobility and DriftLet’s recap the 5-6 major concepts so far: Memorize a few things, but recognize many.(why? semiconductors require lots of approximations)Why all the fuss about the abstract concept of EF?Consider (for example) joining an...

13. Lecture 5: NEGF Simulation of Graphene Nanodevices

    out of 5 stars 

    21 Sep 2009 | | Contributor(s):: Supriyo Datta

14. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    out of 5 stars 

    09 Jul 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

15. Colloquium on Graphene Physics and Devices

    out of 5 stars 

    29 Jul 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

16. Lecture 1: Percolation and Reliability of Electronic Devices

    out of 5 stars 

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

17. Nanostructured Electronic Devices: Percolation and Reliability

    out of 5 stars 

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

18. 

    Katie M Smith

    https://nanohub.org/members/38245

19. 

    Feras Al-Dirini

    Feras Al-Dirini (Member, IEEE) recieved the B.Sc. degree (Hons.) in electronics engineering from Princess Sumaya University for Technology, Jordan, in 2011, and the Ph.D. degree in electrical and...

    https://nanohub.org/members/37710

20. Self-Heating Effects in Nano-Scale Devices. What do we know so far ...

    out of 5 stars 

    08 Aug 2009 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick

    This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...