Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

All Categories (161-180 of 333)

  1. Tutorial for PADRE Based Simulation Tools

    10 Aug 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 5, Part 2 : Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 5: Intrinsic Material, Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  4. Jul 20 2009

    2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...

    https://nanohub.org/events/details/231

  5. MOSCAP: Theoretical Exercise - High Frequency CV Curves

    07 Jul 2009 | | Contributor(s):: Dragica Vasileska

    One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.

  6. BJT Lab: h-Parameters Calculation Exercise

    07 Jul 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...

  7. MOSFet Demonstration: MOSFET Device Simulation and Analysis

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

  8. PN Junction Lab Demonstration: Asymmetric PN Junctions

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.

  9. OMEN Nanowire Demonstration: Nanowire Simulation and Analysis

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.

  10. Resonant Tunneling Diode Simulation with NEGF: First-Time User Guide

    01 Jun 2009 | | Contributor(s):: Samarth Agarwal, Gerhard Klimeck

    This first-time user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue

  11. Piece-Wise Constant Potential Barriers Tool: First-Time User Guide

    01 Jun 2009 | | Contributor(s):: Samarth Agarwal, Gerhard Klimeck

    This supporting document for the Piece-Wise Constant Potential Barriers Tool serves as a first-time user guide. Some basic ideas about quantum mechanical tunneling are introduced in addition to how device geometry influences tunneling probability. The transfer matrix and tight-binding...

  12. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 |

  13. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  14. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  15. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  16. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  17. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  18. ECE 606 Lecture 34: MOSCAP Frequency Response

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  19. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  20. ECE 606 Lecture 30: Heterojunction Bipolar Transistors I

    04 Apr 2009 | | Contributor(s):: Muhammad A. Alam