On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.
Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics,
molecular conduction, and other nanotechnologies.
Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.
Long term Aging of Autonomous STructures (LAAST) Seminar Series
07 Apr 2015 | | Contributor(s):: Ali Shakouri
The Long term Aging of Autonomous STructures (LAAST) seminar series focuses on reliability and aging of devices for energy conversion, information processing or sensing.
[Illinois] Atomic Engineering of III-V Semiconductor for Quantum Devices, from Deep UV (200 nm) to THZ (300 microns)
03 Mar 2015 | | Contributor(s):: Manijeh Razeghi
Nature offers us different kinds of atoms. But it takes human intelligence to put different atoms together in an elegant way in order to realize manmade structures that is lacking in nature. This is especially true in III-V semiconductor material systems. Guided by highly accurate atomic band...
Electronics from the Bottom Up: A New Approach to Nanoelectronic Devices and Materials
The Network for Computational Nanotechnology seeks to bring a new perspective to engineering education to meet the challenges and opportunities of modern nanotechnology. Fifty years ago...
[Illinois] BioEngineering Seminar Series: Implantable Networks of Wireless Nanoelectronic Devices
04 Feb 2014 | | Contributor(s):: Pedro Irazoqui
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
Electron Phonon Interaction in Carbon Nanotube Devices
28 Jun 2013 | | Contributor(s):: Sayed Hasan
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D) wire, is one such possibility. Since the report of the first CNT transistors, lots has been learned...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
Guidelines for Writing NEEDS-certified Verilog-A Compact Models
19 Jun 2013 | | Contributor(s):: Tianshi Wang, Jaijeet Roychowdhury
This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional guidelines for writing Verilog-A models, see the presentation by Drs. Geoffrey Coram and Colin McAndrew.
Introduction to Compact Models and Circuit Simulation
The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed to ease the process of developing simulation-ready compact models for novel nanodevices, is briefly...
19 Jun 2013 | | Contributor(s):: Mark Lundstrom
NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems – physics-based compact models for...
NEEDS Workshop on Compact Modeling
19 Jun 2013 | | Contributor(s):: Mark Lundstrom, Jaijeet Roychowdhury
Advanced inresearch promise a new era of electronics – one that harnesses the capabilities of novel nano-‐engineered materials and devices either alone or in conjunction with powerful silicon platforms. Compact models connect basic work on materials and device physics to circuits and systems....
Verilog-A: Present Status and Guidelines
19 Jun 2013 | | Contributor(s):: Geoffrey Coram
Verilog-A is the standard language for compact model development and implementation.This talk provides some background on the rationale for and development of Verilog-A,summarizes the current status of the language, and provides a short introduction andsome tips for writing good compact models in...
[Illinois] CNST 2012: Translational Research on Micro and Nanobionics Devices for Mobile and Social Sensing Applications
02 Jun 2013 | | Contributor(s):: Gang Logan Liu
Analysis of DC Electrical Conductivity Models of Carbon Nanotube-Polymer Composites with Potential Application to Nanometric Electronic Devices
12 Mar 2013 | | Contributor(s):: Rafael Vargas-Bernal, Gabriel Herrera-Pérez, Ma. Elena Calixto-Olalde, Margarita Tecpoyotl-Torres
The design of nanometric electronic devices requires novel materials for improving their electrical performance from stages of design until their fabrication. Until now, several DC electrical conductivity models for composite materials have been proposed. However, these models must be valued to...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | | Contributor(s):: Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 26: The Future of Computational Electronics
Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service
ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck