Tags: device modelling and simulation

All Categories (1-20 of 148)

  1. a TCAD Lab

    Introduction to TCAD Simulation The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software. Process...

    https://nanohub.org/wiki/aTCADLab

  2. Bisma Bilal

    https://nanohub.org/members/294032

  3. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

    The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

  4. Chapter 1: A Primer MOSCap Tool on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed

    The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...

  5. HERACLIO HEREDIA URETA

    https://nanohub.org/members/277118

  6. Neeraj Tripathi

    https://nanohub.org/members/266406

  7. MD YASIR BASHIR

    https://nanohub.org/members/264748

  8. Ardinc Edis

    https://nanohub.org/members/224255

  9. Sirsha Guha

    https://nanohub.org/members/219875

  10. Shailesh M. Keshkamat

    https://nanohub.org/members/216195

  11. What should be measurement for zener diode simulation in TCAD?

    Closed | Responses: 1

    Hello,

    I'm an electronics engineering student working on semiconductor device simulation using VisualTCAD software in my institute.

    I design pn junction successfully with...

    https://nanohub.org/answers/question/2081

  12. Hasantha Malavipathirana

    https://nanohub.org/members/206996

  13. Electron Transport in Schottky Barrier CNTFETs

    24 Oct 2017 | | Contributor(s):: Igor Bejenari

    This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...

  14. SANJAY KUMAR JANA

    https://nanohub.org/members/165367

  15. Shaik Jani Babu

    https://nanohub.org/members/161382

  16. Sebastian Thiele

    https://nanohub.org/members/160487

  17. Atomistic Modeling of Nano Devices: From Qubits to Transistors

    13 Apr 2016 | | Contributor(s):: Rajib Rahman

    In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

  18. Jan 28 2016

    nanoBIO node Webinar Series (Nanosystems Functionalization Modeling and Simulation)

    This is the nanoBIO node webinar series on online modeling and simulation of:nanobio device Functionalization using Functionalization Workbench (available at nanoHUB.org)Join WebEx...

    https://nanohub.org/events/details/1411

  19. A UCSD analytic TFET model

    18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur

    A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

  20. Mehedi Hasan

    https://nanohub.org/members/135512