Tags: device simulation

Resources (1-20 of 23)

  1. Electron Transport in Schottky Barrier CNTFETs

    24 Oct 2017 | | Contributor(s):: Igor Bejenari

    A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...

  2. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...

  3. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  4. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  5. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | | Contributor(s):: Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  6. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  7. Landauer Approach to Thermoelectrics

    23 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  8. NEMO5 Tutorial 4C: Graphene Nanostructures

    20 Jul 2012 | | Contributor(s):: Junzhe Geng

  9. NEMO5 Tutorials (2012 Summer School)

    19 Jul 2012 | | Contributor(s):: James Fonseca, Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, Parijat Sengupta, Junzhe Geng, Mehdi Salmani Jelodar, Seung Hyun Park, Gerhard Klimeck

    While the general topics presented in the summer school materials are still applicable, many details have changed. If you are looking at these to learn how to use NEMO5, check out the newer materials here:https://nanohub.org/resources/21824  

  10. NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions

    18 Jul 2012 | | Contributor(s):: Yuling Hsueh

  11. NEMO5 Tutorial 5B: Strain

    18 Jul 2012 | | Contributor(s):: Hesameddin Ilatikhameneh

    Learn how the NEMO5 strain solver works.

  12. NEMO5 Tutorial 4B: Device Modeling - Metals

    18 Jul 2012 | | Contributor(s):: Ganesh Krishna Hegde

    Describes some of the modifications made to NEMO5 to include Nth nearest neighbor interactions so that metal electronic structure and transport can be studied. Also includes instructions on how to use NEMO5 input decks to obtain bulk metallic band structures.

  13. NEMO5 Tutorial 7: Using NEMO5 to Quantitatively Predict Topological Insulator Behaviour

    18 Jul 2012 | | Contributor(s):: Parijat Sengupta

  14. NEMO5 Tutorial 6A: Device Simulation - Transport (Double Gate)

    18 Jul 2012 | | Contributor(s):: Mehdi Salmani Jelodar, Seung Hyun Park, Zhengping Jiang, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

  15. NEMO5 Tutorial 1: NEMO5 Technical Overview

    18 Jul 2012 | | Contributor(s):: James Fonseca

    This tutorial goes over the following topics:LicensingGetting NEMO5Getting HelpDocumentationCompilingWorkspaceParallel ComputingRun a job on workspace

  16. NEMO5 Tutorial 2: Input and Output

    18 Jul 2012 | | Contributor(s):: Michael Povolotskyi

  17. NEMO5 Tutorial 4D: NEMO5 Python Solvers

    17 Jul 2012 | | Contributor(s):: Daniel F Mejia

    This tutorial presents a brief introduction to PythonSolvers, a way to expand NEMO5 functionality using Python. Basic principles and a walk through are presented.

  18. NEMO5 Tutorial 5A: Devi ce Simulation - Quantum Dots

    17 Jul 2012 | | Contributor(s):: Jean Michel D Sellier

    This presentation introduces the capabilities of NEMO5 to simulate quantum dots.

  19. NEMO5 Tutorial 3: Models

    17 Jul 2012 | | Contributor(s):: Jean Michel D Sellier

    This tutorial presents the models implemented in NEMO5. A description on how the solvers interact with each other is reported along with the options of the various solvers. An example on how to make a simulation that involves strain calculations, Schroedinger wave functions calculations and an...

  20. NEMO5 Overview Presentation

    17 Jul 2012 | | Contributor(s):: Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck

    This presentation gives an overview of the current functionality of NEMO5.