-

Sunjeet Jena
https://nanohub.org/members/130889
-

vikas nehra
https://nanohub.org/members/127271
-

Dhawal Dilip Mahajan
https://nanohub.org/members/65429
-

chris mansun lee
I received the B.S.degree in microelectronics from Jilin university,Changchun,China,in 2011.From November 2011 to July 2014,I am a graduate student in Peking university ShenZhen graduate...
https://nanohub.org/members/64671
-
Device Parameters Extraction Within Silvaco Simulation Software
30 Jul 2011 | Contributor(s):: Dragica Vasileska
This set of slides explains the extract statements within SILVACO simulation software.
-
2011 NCN@Purdue Summer School: Electronics from the Bottom Up
20 Jul 2011 |
click on image for larger versionAlumni Discussion Group: LinkedIn
-
Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems
20 Jul 2011 | | Contributor(s):: J. L. Gray
Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.
-
Electron-Electron Interactions
20 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.
-
a TCAD Lab
Introduction to TCAD Simulation
The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software.
Process...
https://nanohub.org/wiki/aTCADLab
-
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
-
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
-
Quantum Dot Wave Function (still image)
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
-
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
-
Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
-
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
-
Atomistic Simulations of Reliability
06 Jul 2010 | | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...
-
Simulation of laser devices with ActiveMedia nanophotonics tool (ACME NPDS)
This tutorial is intended to demonstrate how to build a device and analyze its optical properties and lasing behavior.
https://nanohub.org/wiki/SimulationoflaserdeviceswithActiveMediananophotonicstoolACMENPDS
-
Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias
18 Nov 2009 | | Contributor(s):: Eric Pop
Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.
-
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.
-
Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations
30 Dec 2008 | | Contributor(s):: Eric Pop