All Categories (21-40 of 94)

1. Diffusion of holes and electrons

   15 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

   Diffusion is a process of particles distributing themselves from regions of high- to low- concentrations. In semi-classical electronics these particles are the charge carriers (electrons and holes). The rate at which a carrier can diffuse is called diffusion constant with units of cm2/s. The...

2. Dimensional Analysis for Dummies

   20 Mar 2019 |

   Derivation of the error function solution to the diffusion equation, and description of the point source in 1-, 2- and 3-dimensions..

3. Dimensional Analysis: Catalytic Combustion of Carbon Monoxide

   16 May 2019 | | Contributor(s):: Adam Powell

   Use dimensional analysis to understand how parameters and material properties determine uniformity of reactant gas concentration across porous spheres coated with catalysts.

4. Doping to Create a Semiconductor: Changing conductive properties through diffusion

   14 Jan 2020 | | Contributor(s):: Kaye Sheets, NNCI Nano

   In the semiconductor industry scientists take advantage of diffusion to “dope” or introduce atoms into a silicon wafer to change its conductive properties. The lesson simulates the diffusion of a gas phase substance (ammonia) into a solid substrate (gelatin)  and compares the...

5. Drift Diffusion Lab Worked out problems (Diffusion)

   16 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

   A sample problem is worked out using Drift-Diffusion lab. The problem statement deals with the concept of diffusion in semiconductors.

6. Drift Diffusion Lab: First-Time User Guide

   13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley

   This first-time user guide provides introductory material to Drift Diffusion Lab on nanoHUB. It includes a tour of the Rappture interface, which notes key inputs and typical outputs. It also provides an introduction to concepts of drift and diffusion in a semiconductor. We discuss the default...

7. Drift-Diffusion Lab

   22 Jan 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Gloria Wahyu Budiman

   Simulate single semiconductor characteristics

8. Drive-in Diffusion of Semiconductor Dopant

   01 Aug 2019 | | Contributor(s):: Adam Powell

   Sketch concentration profiles and calculate depth vs. time of n-type layer growing by drive-in diffusion.

9. ECE 606 L17.4 Transport - Physics of Diffusion – Einstein Relationship

   28 Apr 2023 | | Contributor(s):: Gerhard Klimeck

10. ECE 606 L18.2 Semiconductor Equations - Analytical Solutions (Strategy & Examples)

    28 Apr 2023 | | Contributor(s):: Gerhard Klimeck

11. ECE 606 L21.3: PN Diode - Minority Carrier Diffusion Capacitance

    28 Apr 2023 | | Contributor(s):: Gerhard Klimeck

12. ECE 606 L22.3: PN Diode - Steady-State Expression From Charge Continuity

    28 Apr 2023 | | Contributor(s):: Gerhard Klimeck

13. ECE 606 L23.1: Schottky Diode - Basics

    28 Apr 2023 | | Contributor(s):: Gerhard Klimeck

14. ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations

    27 Sep 2012 | | Contributor(s):: Gerhard Klimeck

15. ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion

    10 Oct 2012 | | Contributor(s):: Gerhard Klimeck

16. ECE 606 Lecture 17: Hall Effect, Diffusion

    out of 5 stars 

    24 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Measurement of mobilityHall Effect for determining carrier concentrationPhysics of diffusionConclusions

17. ECE 695A Lecture 11R: Review Questions

    out of 5 stars 

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...

18. Grain Boundary Diffusion Calculator

    out of 5 stars 

    25 Sep 2015 |

    Calculates the effective diffusivity in a grain boundary network with two types of randomly distributed grain boundaries.

19. Growth of Precipitate Particle from Super Saturated Solid Solution

    out of 5 stars 

    20 Aug 2019 | | Contributor(s):: Matthew John M. Krane

    Use integral analysis to derive growth paramters for a precipitate particle during heat treatment.

20. Heat Conduction and Diffusion in Alloy Casting

    out of 5 stars 

    16 May 2019 | | Contributor(s):: Adam Powell

    Derive temperature and liquid concentration profiles during die casting of a roughly plate-shaped alloy part.