Tags: Dilute Impurity Alloys

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  1. Bismide Semiconductors: Revolutionising Telecom Lasers

    19 Oct 2015 | | Contributor(s):: Muhammad Usman, Christopher A Broderick, Eoin P O\'reilly

    Today’s telecomm lasers are plagued with Auger-related losses, which significantly reduce their efficiency and make device cooling essential. We are proposing a radical change in the laser technology by developing a new class of materials, bismide semiconductors. These novel nanomaterials...

  2. Electronic Structure Theory of Dilute Impurity Alloys: GaBiP and GaBiAs

    18 Jan 2013 | | Contributor(s):: M. Usman

    We report an atomistic model established for electronic structure calculations of GaBiAs (0 < Bi < 12%) alloys based on empirical tight binding parameters. Alloy supercells consisting of 1000 and 8000 atoms are relaxed using valence force field (VFF) method, including anharmonic corrections to...

  3. Muhammad Usman

    Muhammad Usman was graduated from the Electrical & Computer Engineering Department of Purdue University in August 2010. His PhD thesis was theoretical modelling and simulations of InGaAs/GaAs...

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