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Illinois ABE 446 Lecture 1: Introduction/What is nanotechnology?
11 Feb 2010 | Teaching Materials | Contributor(s): Kaustubh Bhalerao
Illinois ABE 446 Lecture 2: Synthetic Nanostructures
Illinois ABE 446 Lecture 3: Quantum Dots and Polymers
Homework for Circuit Simulation: ECE 255
0.0 out of 5 stars
08 Jan 2006 | Teaching Materials | Contributor(s): Gerold W. Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, or
sometimes check their work, by using the Spice...
Homework for Monte Carlo Method: High field transport in Bulk Si
5.0 out of 5 stars
06 Jan 2006 | Teaching Materials | Contributor(s): Muhammad A. Alam
This homework assignment is part of ECE 656 "Electronic Transport in Semiconductors" (Purdue University). It contains 10 problems which lead students through the simulation of high-field...
Homework for PN Junctions: Depletion Approximation (ECE 606)
09 Jan 2006 | Teaching Materials | Contributor(s): Muhammad A. Alam
This homework assignment is part of ECE 606 "Solid State Devices" (Purdue University). It contains 5 problems which lead students through a comparison of the depletion approximation and an exact...
Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006 | Teaching Materials | Contributor(s): Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation...
Illinois ECE 440: Diffusion and Energy Band Diagram Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Diffusion of Carriers, Built-in Fields and Metal semiconductor junctions.
Illinois ECE 440: MOS Capacitor Homework
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
Illinois ECE 440: Carrier Generation and Recombination and photo-conductivity Homework
This homework covers Optical Absorption, Excess Carrier Concentration, Steady State Carrier Generation, and Quasi-Fermi Levels.
Illinois ECE 440: Charge Carrier in Bulk Semiconductors Homework
This homework covers the effects of doping on carrier concentration in bulk silicon.
Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework
This homework covers Carrier Transport in Semiconductors subjected to an electric field.
Illinois ECE 440: Introduction to Crystal Properties Homework
This homework Assignment covers basic introduction to Material Properties and Crystal Structures.
Illinois ECE 440: MOS Field-Effect Transistor Homework
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Illinois ECE 440: Photodiodes Homework
This homework covers Current and Voltage in an Illuminated Junction, Solar Cells, and PN Junction Simulation.
Illinois ECE 440: PN Junction Homework
This homework covers P-N junctions in equilibrium, contact potential, and Space Charge at a Junction.
Illinois ECE 440: znipolar Junction Transistor (BJT) Homework
This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.
Illinois Tools: Effect of Doping on Semiconductors
4.5 out of 5 stars
01 Feb 2008 | Teaching Materials | Contributor(s): Umberto Ravaioli, Nahil Sobh
This Java applet allows students to visualize the effects of doping on carrier concentration in bulk silicon. It utilizes the non-degenerate Maxwell statistics to explore the effects of doping...
Nanotechnology and the NAE Grand Challenge Make Solar Energy Economical
20 Jun 2016 | Teaching Materials | Contributor(s): Edward Davis, Virginia A. Davis
This group of materials is designed to provide a framework to teach students in an introductory engineering course basic nanotechnology concepts. The materials use the NAE grand challenge...
REBO Nanofluidics Exercise
10 May 2006 | Teaching Materials | Contributor(s): Susan Sinnott, Hetal Patel
Nanofluidics exercise showing the variation of energy and position
of methane and butane molecules flowing through an opened carbon
nanotube as the system temperature and the length of the...