
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highk gate...

ECE 595E Lecture 9: Programming for Linear Algebra
01 Feb 2013   Contributor(s):: Peter Bermel
Outline:Recap from FridayApplication ExamplesElectrostatic potential (Poisson’s equation)1D array of charge2D grid of chargeArrays of interacting spins1D interaction along a chain2D nearestneighbor coupling

ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 16: pn Diode AC Response
24 Oct 2012   Contributor(s):: Gerhard Klimeck

Notes on the Solution of the PoissonBoltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012   Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

ECE 606 Lecture 15: pn Diode Characteristics
17 Oct 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 14: pn Junctions
04 Oct 2012   Contributor(s):: Gerhard Klimeck

Nanoscale Transistors Lecture 4: MOS Electrostatics
19 Jul 2012   Contributor(s):: Mark Lundstrom

Particle Simulations of Ion Generation and Transport in Microelectromechanical Systems and Micropropulsion
29 May 2012   Contributor(s):: Venkattraman Ayyaswamy
The first part of the talk deals with use of the PIC method with Monte Carlo collisions (MCC) between electrons and the ambient neutral gas to develop models to predict charge accumulation, breakdown voltage, etc. for various ambient gases, gap sizes, cathode material, and frequency of applied...

Capacitance Modeling Tool Using SchwarzChristoffel Mapping
20 Oct 2010   Contributor(s):: Fengyuan (Thomas) Li, jason clark
Calculate the capacitance between two conductors that may be represented as simplyconnected polygonal geometries in 2.5D with Dirichlet boundary conditions

2010 NanoBiophotonics Summer School @ UIUC Lecture 2  2D/3D Fourier transforms & Electromagnetic fields/ LorentzDrude model
20 Sep 2010   Contributor(s):: Gabriel Popescu
So far, we have discussed Fourier transformations involving onedimensional functions. Of course, in studying imaging, the conceptmust be generalized to 2D and 3D functions. For example, diffraction and 2D image formation are treated efficiently via 2D Fouriertransforms, while light scattering...

Comb Drive Levitation
19 Jan 2010   Contributor(s):: Fengyuan (Thomas) Li, jason clark
Model comb drive levitation effect with SchwarzChristoffel based algorithm

ME 597 Lecture 25: Using the AFM to Measure Electrostatic Forces
02 Dec 2009   Contributor(s):: Ron Reifenberger

Illinois ECE 440 Solid State Electronic Devices, Lecture 18: PN Diode Electrostatics
21 Oct 2009   Contributor(s):: Eric Pop
Last time, we talked about pn junction builtin voltage V¬0.Today: more about pn electrostatics.

ECE 606 Lecture 33: MOS Electrostatics II
16 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 20: Electrostatics of PN Junction Diodes
11 Mar 2009   Contributor(s):: Muhammad A. Alam

ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008   Contributor(s):: Mark Lundstrom
Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.

ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008   Contributor(s):: Muhammad A. Alam

MSE 597G Lecture 5: Interatomic potentials II
13 Nov 2008   Contributor(s):: Alejandro Strachan
Embedded atom model for metals,Three body terms for semiconductors: StillingerWeber,Electrostatics and Covalent interactions.

ECE 612 Lecture 14: VT Engineering
28 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Deltafunction doping, xC = 0,4) Deltafunction doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how nonuniform doping profiles affect...