EPFL HEMT MODEL
14 Aug 2019 | Compact Models | Contributor(s):
By Farzan Jazaeri1, jean-michel sallese, Majid Shalchian2, Matthias Bucher, Nikolaos Makris3
1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...
[Poster] MIT Virtual Source GaNFET Model: RF Circuit Design and Experimental Verification
25 May 2016 | | Contributor(s):: Ujwal Radhakrishna
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
29 Aug 2015 | Compact Models | Contributor(s):
By Ujwal Radhakrishna1, Dimitri Antoniadis2
1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
How to simulate the GaN Power Device model
Closed | Responses: 0
I’m new to device modeling and I want to numerically simulate GaN device equations using...
Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
12 Jun 2013 | | Contributor(s):: Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
Niraj Man Shrestha
Research Within Vasileska Group
29 Jun 2010 | | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.