Tags: GaN HEMTs

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  1. EPFL HEMT MODEL

    14 Aug 2019 | Compact Models | Contributor(s):

    By Farzan Jazaeri1, jean-michel sallese, Majid Shalchian2, Matthias Bucher, Nikolaos Makris3

    1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete

    The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...

    https://nanohub.org/publications/301/?v=1

  2. [Poster] MIT Virtual Source GaNFET Model: RF Circuit Design and Experimental Verification

    25 May 2016 | | Contributor(s):: Ujwal Radhakrishna

  3. Nour BOUKORTT

    https://nanohub.org/members/133335

  4. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    https://nanohub.org/publications/73/?v=1

  5. How to simulate the GaN Power Device model

    Closed | Responses: 0

    Hello All,

    I’m new to device modeling and I want to numerically simulate GaN device equations using...

    https://nanohub.org/answers/question/1317

  6. How to simulate the GaN Power Device model

    Closed | Responses: 0

    Hello All,

    I’m new to device modeling and I want to numerically simulate GaN device equations using...

    https://nanohub.org/answers/question/1316

  7. Modeling Self-Heating Effects in SOI Devices and GaN HEMTs

    12 Jun 2013 | | Contributor(s):: Dragica Vasileska

    The role of self-heating effects is investigated in SOI devices and GaN HEMTs.

  8. Niraj Man Shrestha

    https://nanohub.org/members/75934

  9. Research Within Vasileska Group

    29 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.