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UCSB Graphene Nanoribbon Interconnect Compact Model
20 Apr 2017 | Compact Models | Contributor(s):
By Junkai Jiang1, Kaustav Banerjee1, Wei Cao2
1. University of California, Santa Barbara 2. University of California Santa Barbara
As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current...
https://nanohub.org/publications/126/?v=1
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Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
06 Apr 2016 | Compact Models | Contributor(s):
By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3
1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
https://nanohub.org/publications/133/?v=1
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UCSB Graphene Nanoribbon Interconnect Compact Model
21 Apr 2015 | Compact Models | Contributor(s):
By Junkai Jiang1, Wei Cao1, Kaustav Banerjee1
University of California Santa Barbara
UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was...
https://nanohub.org/publications/57/?v=1