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ECE 695A Lecture 16: Review Questions
22 Feb 2013 | | Contributor(s):: Muhammad Alam
Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly...
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...
ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...
ECE 695A Lecture 15: Off-state HCI Degradation
Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions
ECE 695A Lecture 16: Temperature Dependence of HCI
Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions
ECE 695A Lecture 13R: Review Questions
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...