Tags: HEMT

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  1. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    https://nanohub.org/publications/71/?v=1

  2. MVS Nanotransistor Model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    https://nanohub.org/publications/74/?v=1

  3. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    https://nanohub.org/resources/20335

  4. Bikash Sharma

    BIKASH SHARMA__Member__: IEEE__Life Member__: System Society of India; Indian Physical Society __ADDRESS FOR CORRESPONDENCE__Associate ProfessorDept. of Electronics & Communication Engg.Sikkim...

    https://nanohub.org/members/69395

  5. what is the use of multi channel layers in HEMT?

    Open | Responses: 1

    The new HEMT’s like InAlAs/InGaAs/Inp are having number of channels(let’s say 3) with different...

    https://nanohub.org/answers/question/657