Tags: HEMT devices

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  1. Nour BOUKORTT

    https://nanohub.org/members/133335

  2. Theodore Chandra

    https://nanohub.org/members/105987

  3. Lekha Kuchipudi

    https://nanohub.org/members/70852

  4. wht is the s of k.p model in ATLAS.Does it contribute the effect of commpressive strain when In0.53Ga0.47As is grown on In0.5Al0.5As

    Closed | Responses: 0

    https://nanohub.org/answers/question/922

  5. Umesh Prasad Gomes

    M.ScJadavpur UniversityJadavpur University2009Electronic Science81.9B.ScNorth Bengal UniversitySt.Joseph’s College2007Physics64.5Higher SecondaryISCVidya Vikash...

    https://nanohub.org/members/57901

  6. The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures

    11 Jul 2011 | | Contributor(s):: Zhores I. Alferov

    It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum wells, quantum wires and quantum dots, currently comprise the object of investigation of two thirds of...

  7. Illinois Nano EP Seminar Series Spring 2010 - Lecture 1: Hetero-epitaxy of III-V Compounds on Silicon Substrates by MOCVD for Device Applications

    23 Feb 2011 | | Contributor(s):: Kei May Lau

    III-V compounds have established their niches in optoelectronic, high-frequency and high-speed device applications that cannot be matched by Si electronics. However, Si has been and will remain the workhorse inthe semiconductor industry. To further improve the performance and extend the...