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Illinois Nano EP Seminar Series Spring 2010 - Lecture 1: Hetero-epitaxy of III-V Compounds on Silicon Substrates by MOCVD for Device Applications
23 Feb 2011 | | Contributor(s):: Kei May Lau
III-V compounds have established their niches in optoelectronic, high-frequency and high-speed device applications that cannot be matched by Si electronics. However, Si has been and will remain the workhorse inthe semiconductor industry. To further improve the performance and extend the...