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nMOSFET RF and noise model on standard 45nm SOI technology
01 Jan 2017 | Compact Models | Contributor(s):
By Yanfei Shen1, Saeed Mohammadi1
A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
sunit kumar sahoo
Kei May Lau