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UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
25 Mar 2015 | Compact Models | Contributor(s):
By Wei Cao1, Kaustav Banerjee1
University of California Santa Barbara
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
5.0 out of 5 stars
23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...