On Monday July 6th, the nanoHUB will be intermittently unavailable due to scheduled maintenance. All tool sessions will be shut down early in the morning. Home directories and tools will be unavailable most of the day. We apologize for any inconvenience this may cause. close

Support

Support Options

Submit a Support Ticket

 

Tags: Interface Trap

All Categories (1-2 of 2)

  1. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    25 Mar 2015 | Compact Models

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

    https://nanohub.org/publications/51/?v=1

  2. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

    23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

    Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...

    https://nanohub.org/resources/6067

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.