Tags: I-V curves/characteristics

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  1. Transistors!

    04 Mar 2024 | | Contributor(s):: Mark Lundstrom

    As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes...

  2. ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  3. ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 L20.4: PN Diode - Non-Ideal Effects

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  6. ECE 606 L23.1: Schottky Diode - Basics

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  7. What's the mobility?

    08 Sep 2021 | | Contributor(s):: Eric Pop

    This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...

  8. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

    15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

  9. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

    15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

    In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

  10. Why do intensity oscilates and diverges ?

    Q&A|Closed | Responses: 1

    The physical system that I am trying to reproduce is the following: an intrinsic semiconductor with a length of 400 μm to which a potential difference is applied (up to 2 V) and which is...

    https://nanohub.org/answers/question/2478

  11. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

    The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

  12. How to change the electrode material in the adept tool

    Q&A|Closed | Responses: 0

    How to change the electrode material in the tool adept? I can't find the metal contact section in the setting bars.Thanks!

    https://nanohub.org/answers/question/1745

  13. I V characteristic ?

    Q&A|Closed | Responses: 0

    First of thanking you very much for sharing this wonderful tool on PN junction. 

    I am using MATLAB for solving the same kind of configuration of PN junction and got the...

    https://nanohub.org/answers/question/1516

  14. Negative biases not working for i-v?

    Q&A|Closed | Responses: 1

    Negative biases are no longer being plotted for i-v calculations as of the most recent update. Is this a bug or is there another way to simulate negative biases now?

    https://nanohub.org/answers/question/1499

  15. How to plot the IV curve for a three layer simulation

    Q&A|Closed | Responses: 0

    I cannot see the option of IV curve in the result part for a three layer simulation.

    Would anyone please tell me how to ask the ADEPT to plot that IV curve for forward...

    https://nanohub.org/answers/question/1271

  16. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  18. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  19. Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

  20. Solar Cells Lecture 1: Introduction to Photovoltaics

    19 Aug 2011 | | Contributor(s):: Mark Lundstrom

    An introduction to solar cells covering the basics of PN junctions, optical absorption, and IV characteristics. Key technology options and economic considers are briefly presented.