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4.0 out of 5 stars
01 May 2007 | Tools | Contributor(s): J. L. Gray, Michael McLennan
Simulates 1D heterostructures, including solar cells
5.0 out of 5 stars
31 Oct 2006 | Tools | Contributor(s): M. E. Klausmeier-Brown, C. M. Maziar, P. E. Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Improved program consists of DEMON and SDEMON
Illinois Tools: MOCA
28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
4.5 out of 5 stars
13 May 2004 | Tools | Contributor(s): Steven Clark
Modeling Interface-defect Generation (MIG)
18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI
0.0 out of 5 stars
06 Feb 2007 | Tools | Contributor(s): Wei Zhao, Yu Cao
Predictive model files for future transistor technologies.
12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis
PN Junction Lab
12 Sep 2005 | Tools | Contributor(s): Dragica Vasileska, Matteo Mannino, Michael McLennan, Xufeng Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Benjamin P Haley
This tool enables users to explore and teach the basic concepts of P-N junction devices.
Process Lab: Concentration-Dependent Diffusion
09 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
This modules simulates both the standard diffusion and concentration-dependent diffusion.
Process Lab: Defect-coupled diffusion
3.0 out of 5 stars
This tool simulates dopant diffusion coupled with point defects.
Process Lab: Oxidation Flux
This module simulates the oxidation flux.
Integrated Circuit Fabrication Process Simulation
2.0 out of 5 stars
15 May 2005 | Tools | Contributor(s): Connor S. Rafferty, kent smith, Yang Liu, Derrick Kearney, Steven Clark
Framework for solving systems of partial differential equations (PDEs) in time and 1, 2, or 3 space dimensions
30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
14 Aug 2005 | Tools | Contributor(s): Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis
30 Apr 2007 | Tools | Contributor(s): Steven Clark
TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.