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Abe Yue Huang
06 Feb 2007 | | Contributor(s):: wei zhao, yu cao
Predictive model files for future transistor technologies.
31 Oct 2006 | | Contributor(s):: , , Paul Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Improved program consists of DEMON and SDEMON
Process Lab: Defect-coupled diffusion
09 Oct 2006 | | Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This tool simulates dopant diffusion coupled with point defects.
Process Lab: Concentration-Dependent Diffusion
This modules simulates both the standard diffusion and concentration-dependent diffusion.
Integrated Circuit Fabrication Process Simulation
Process Lab: Oxidation Flux
This module simulates the oxidation flux.
Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI
Modeling Single and Dual-Gate Capacitors using SCHRED
out of 5 stars
31 Mar 2006 | | Contributor(s):: Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge...
30 Mar 2006 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
12 Jan 2006 | | Contributor(s):: Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis
How Semiconductors and Transistors Work
20 Nov 2005 |
This animation shows how semiconductor crystals work and how they are used to make transistor switches.
Molecular Beam Epitaxy
16 Nov 2005 |
Microelectronic devices are made by repeating two steps: 1) Depositing a thin uniform layer of material; 2) Then using a photographic process to pattern and remove unwanted areas of that layer.
PN Junction Lab
12 Sep 2005 | | Contributor(s):: Dragica Vasileska, Matteo Mannino, Michael McLennan, Xufeng Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Benjamin P Haley
This tool enables users to explore and teach the basic concepts of P-N junction devices.
14 Aug 2005 | | Contributor(s):: Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis
15 May 2005 | | Contributor(s):: Connor S. Rafferty, kent smith, Yang Liu, Derrick Kearney, Steven Clark
Framework for solving systems of partial differential equations (PDEs) in time and 1, 2, or 3 space dimensions
Schred Source Code Download
09 Mar 2005 | | Contributor(s):: Dragica Vasileska,
Schred 2.0 calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and...