Due to local system maintenance on Tuesday, September 27th, nanoHUB will be unable to launch simulation jobs on clusters conte, rice, carter, and hansen. We apologize for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
PN Junction Lab Demonstration: Asymmetric PN Junctions
11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.
Jose M. de la Rosa
CAD of MEMS & NEMS: State of the Art & Future Challenges
5.0 out of 5 stars
04 Mar 2008 | Online Presentations | Contributor(s): Andreas Cangellaris
Computer aided design environments are very mature and used extensively for the design of every integrated electronical component that is commercially available to all of us. This presentation...
Srinivasa Murali Dunga
4.5 out of 5 stars
24 Jul 2007 | Tools | Contributor(s): Steven Clark
Introduction to Schred
0.0 out of 5 stars
28 Jun 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon...
4.0 out of 5 stars
01 May 2007 | Tools | Contributor(s): J. L. Gray, Michael McLennan
Simulates 1D heterostructures, including solar cells
30 Apr 2007 | Tools | Contributor(s): Steven Clark
TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.
Illinois Tools: MOCA
28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
Abe Yue Huang
09 Feb 2007 | Tools | Contributor(s): Wei Zhao, Yu Cao
Predictive model files for future transistor technologies.
31 Oct 2006 | Tools | Contributor(s): M. E. Klausmeier-Brown, C. M. Maziar, P. E. Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Improved program consists of DEMON and SDEMON
Process Lab: Defect-coupled diffusion
3.0 out of 5 stars
31 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
This tool simulates dopant diffusion coupled with point defects.
Process Lab: Concentration-Dependent Diffusion
This modules simulates both the standard diffusion and concentration-dependent diffusion.
19 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
Integrated Circuit Fabrication Process Simulation
Process Lab: Oxidation Flux
This module simulates the oxidation flux.
Modeling Interface-defect Generation (MIG)
28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI
Modeling Single and Dual-Gate Capacitors using SCHRED
31 Mar 2006 | Learning Modules | Contributor(s): Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many...
09 Feb 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis