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4.5 out of 5 stars
24 Jul 2007 | Tools | Contributor(s): Steven Clark
Modeling Interface-defect Generation (MIG)
4.0 out of 5 stars
28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI
Modeling Single and Dual-Gate Capacitors using SCHRED
0.0 out of 5 stars
31 Mar 2006 | Learning Modules | Contributor(s): Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many...
Molecular Beam Epitaxy
16 Nov 2005 | Animations | Contributor(s): John C. Bean
Microelectronic devices are made by repeating two steps: 1) Depositing a thin uniform layer of material; 2) Then using a photographic process to pattern and remove unwanted areas of that layer.
MOSCap Demonstration: MOS Capacitor Simulation
11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley
This video shows the simulation of a MOS capacitor using the MOSCAP tool. Several powerful analytic features of this tool are demonstrated.
MOSFet Demonstration: MOSFET Device Simulation and Analysis
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
09 Feb 2007 | Tools | Contributor(s): Wei Zhao, Yu Cao
Predictive model files for future transistor technologies.
12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis
PN Junction Lab
5.0 out of 5 stars
12 Sep 2005 | Tools | Contributor(s): Dragica Vasileska, Matteo Mannino, Michael McLennan, Xufeng Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Benjamin P Haley
This tool enables users to explore and teach the basic concepts of P-N junction devices.
PN Junction Lab Demonstration: Asymmetric PN Junctions
This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.
Process Lab: Concentration-Dependent Diffusion
31 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
This modules simulates both the standard diffusion and concentration-dependent diffusion.
Process Lab: Defect-coupled diffusion
3.0 out of 5 stars
This tool simulates dopant diffusion coupled with point defects.
Process Lab: Oxidation Flux
19 Oct 2006 | Tools | Contributor(s): Shuqing (Victor) Cao, Yang Liu, Peter Griffin
This module simulates the oxidation flux.
Integrated Circuit Fabrication Process Simulation
2.0 out of 5 stars
15 May 2005 | Tools | Contributor(s): Connor S. Rafferty, kent smith, Yang Liu, Derrick Kearney, Steven Clark
Framework for solving systems of partial differential equations (PDEs) in time and 1, 2, or 3 space dimensions
09 Feb 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Schred Source Code Download
09 Mar 2005 | Downloads | Contributor(s): Dragica Vasileska, Zhibin Ren
Schred 2.0 calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a...