ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015 | | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012 | | Contributor(s):: Gerhard Klimeck
Mobility and Resistivity Tool
15 Jun 2012 | | Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.
ECE 656 Lecture 30: Balance Equation Approach I
20 Dec 2011 | | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I
Manual for the Generalized Bulk Monte Carlo Tool
23 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska
This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.
Drift-Diffusion Lab Learning Materials
By completing the Drift-Diffusion Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to: a) understand the phenomenon of drift and...
MOSFet Learning Materials
By completing the MOSFET Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b) the...
Explanation of Rode's Iterative Procedure
20 Jul 2010 | | Contributor(s):: David K. Ferry, Dragica Vasileska
This set of slides describes the Rode's iterative procedure for the mobility calculation when the scattering mechanisms are neither elastic nor isotropic such as is polar optical phonon scattering.
Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework
27 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Carrier Transport in Semiconductors subjected to an electric field.
26 Apr 2009 | | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Illinois Tools: Basic Bulk Silicon Transport Data at 300K
27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan
Calculations of doped bulk silicon transport data (new version release)
ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary
ECE 656 Lecture 26: Mobility in 3D, 2D, and 1D
The goal in this lecture is to examine one scattering mechanism (ADP scattering) in 3D, 2D, and 1D to see how the scattering rate changes with dimensionality. Then we’ll compare mobilities in 3D, 2D, and 1D.Outline:Review of ADP Scattering in 3DADP Scattering in 2D: MCAADP Scattering in 2D:...
Notes on Scattering and Mobility in 1D, 2D, and 3D
03 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in non-confined ones.
ECE 606 Lecture 16: Carrier Transport
out of 5 stars
23 Feb 2009 | | Contributor(s):: Muhammad A. Alam
ECE 659 Lecture 3: Mobility
21 Jan 2009 | | Contributor(s):: Supriyo Datta
Conductivity - Theoretical Exercise
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
Ensemble Monte Carlo Method Described
27 Apr 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR
how to calculate electron mobility
Open | Responses: 1
Can any one tell me how to find mobility if only hole or electron concentrations are known??
to find mobility