Tags: Monte Carlo

Description

Monte Carlo methods are a class of computational algorithms that rely on repeated random sampling to compute their results. Monte Carlo methods are often used in simulating physical and mathematical systems. Because of their reliance on repeated computation of random or pseudo-random numbers, these methods are most suited to calculation by a computer and tend to be used when it is unfeasible or impossible to compute an exact result with a deterministic algorithm.

Learn more about quantum dots from the many resources on this site, listed below. More information on Monte Carlo method can be found here.

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  1. Dierk Raabe

    PROFESSIONAL SKETCHPROF. DIERK RAABEDepartment of Microstructure Physics and Alloy DesignMax-Planck-Institut fuer EisenforschungFax: ++49 –(0)211-6792-278E-mail: d.raabe@mpie.dewww.mpie.de- - - -...

    https://nanohub.org/members/58719

  2. Discussion about Ion Channels Using Reduced Model Approaches

    21 Sep 2011 | | Contributor(s):: James Fonseca

    The seminar will cover the reasons how the channels are able to selectively permit the flow of certain species of ions while blocking other physiological cations.

  3. Test for Monte Carlo Learning Module

    30 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    this is a test for the MC Learning Module.

  4. Buddy Damm

    I am interested in applying computational materials science tools to practicle issues in ferrous metallurgy in order to advance our understanding and applications of steels. My educational...

    https://nanohub.org/members/56465

  5. Single Particle and Ensemble Monte Carlo Method

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of handwritten notes is part of the Semiconductor Transport class.

  6. How to do 3D quantum monte carlo in Silvaco Atlas

    Closed | Responses: 0

    I am trying to simulation LER, RDF, variation of Fin height and fin thickness of tri-gate FINFET. I have access to Silvaco atlas. Do anybody has experience on 3D monter carlo in Silvac Atlas. I...

    https://nanohub.org/answers/question/822

  7. Manual for the Generalized Bulk Monte Carlo Tool

    24 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska

    This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.

  8. Generalized Monte Carlo Presentation

    20 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steady-state velocity-field characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a non-parabolic bandstructure.

  9. High Field Transport and the Monte Carlo Method for the Solution of the Boltzmann Transport Equation

    23 Jul 2010 | | Contributor(s):: Dragica Vasileska

    This set of slides first describes the path-integral solution of the BTE and then discusses in details the Monte Carlo Method for the Solution of the Boltzmann Transport Equation.

  10. Atomistic Simulations of Reliability

    06 Jul 2010 | | Contributor(s):: Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...

  11. Bulk Monte Carlo: Implementation Details and Source Codes Download

    01 Jun 2010 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick

    The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...

  12. Lecture 7: Initialization and Equilibrium

    05 Jan 2010 | | Contributor(s):: Ashlie Martini

    Topics:Initial positionsInitial velocitiesEvaluating equilibrium

  13. ECE 656 Lecture 31: Monte Carlo Simulation

    01 Dec 2009 | | Contributor(s):: Mark Lundstrom

    Outline:IntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary

  14. ECE 656 Lecture 30: Balance Equation Approach III

    01 Dec 2009 | | Contributor(s):: Mark Lundstrom

    OutlineCarrier Temperature and Heat FluxBalance equations in 3DHeterostructuresSummary

  15. From Semi-Classical to Quantum Transport Modeling: Particle-Based Device Simulations

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

  16. Band Structure Lab: First-Time User Guide

    15 Jun 2009 | | Contributor(s):: Abhijeet Paul, Benjamin P Haley, Gerhard Klimeck

    This document provides useful information about Band Structure Lab. First-time users will find basic ideas about the physics behind the tool such as band formation, the Hamiltonian description, and other aspects. Additionally, we provide explanations of the input settings and the results of the...

  17. Illinois PHYS 466, Lecture 18: Kinetic Monte Carlo (KMC)

    04 May 2009 | | Contributor(s):: David M. Ceperley, Omar N Sobh

  18. Archimedes, GNU Monte Carlo simulator

    29 May 2008 | | Contributor(s):: Jean Michel D Sellier

    GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials

  19. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | | Contributor(s):: Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

  20. Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations

    21 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.