Tags: Monte Carlo simulation

All Categories (1-20 of 26)

  1. Ruslan Allayarov

    https://nanohub.org/members/278942

  2. Thomas A Manz

    Tom Manz is a Chemical & Materials Engineering faculty at New Mexico State University. His research group develops new computational chemistry methods and physical interaction models. He is the...

    https://nanohub.org/members/222347

  3. Composite Filament Simulation 3D

    15 Feb 2019 | | Contributor(s):: Zachary Yun, Michelle Zhang, Ganesh Vurimi, Hayden Taylor

    Simulate electrical properties of a nanowire composite filament.

  4. jara siddika

    staff, RUET

    https://nanohub.org/members/214566

  5. Harshit Pandey

    I'm a Final Year UG student pursuing B.Tech in Mechanical Engineering. I wish to pursue MS in Material Science and Engineering and further develop better materials for wide array of products...

    https://nanohub.org/members/207057

  6. Applying Machine Learning to Computational Chemistry: Can We Predict Molecular Properties Faster without Compromising Accuracy?

    14 Aug 2017 | | Contributor(s):: Hanjing Xu, Pradeep Kumar Gurunathan

    Non-covalent interactions are crucial in analyzing protein folding and structure, function of DNA and RNA, structures of molecular crystals and aggregates, and many other processes in the fields of biology and chemistry. However, it is time and resource consuming to calculate such interactions...

  7. Steve Broadbent

    https://nanohub.org/members/136957

  8. Sheng Ying Yue

    https://nanohub.org/members/120281

  9. Zhao Li

    https://nanohub.org/members/115622

  10. Zhichao Yang

    https://nanohub.org/members/89859

  11. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  12. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

  13. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  14. Jul 23 2012

    Illinois 2012: Summer School on Computational Materials Science Quantum Monte Carlo: Theory and Fundamentals

    2012 Icon This school brings together scientists from the fields of geophysics, physics, materials science, chemistry and high-performance computing to learn fundamentals of Quantum Monte Carlo...

    https://nanohub.org/events/details/336

  15. Manual for Archimedes, the GNU Monte Carlo simulator

    25 Jun 2012 | | Contributor(s):: Jean Michel D Sellier

    Please, feel free to download the manual of Archimedes.Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has been created by Jean Michel D. Sellier who is, since then, the leader of the project and the main...

  16. ECE 656 Lecture 34a: Monte Carlo Simulation I

    21 Feb 2012 | | Contributor(s):: Mark Lundstrom

    OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary

  17. ECE 656 Lecture 34b: Monte Carlo Simulation II

    21 Feb 2012 | | Contributor(s):: Mark Lundstrom

    OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary

  18. Bhupesh Bishnoi

    https://nanohub.org/members/62512

  19. ECE 656 Lecture 32: Balance Equation Approach III

    19 Jan 2012 | | Contributor(s):: Mark Lundstrom

    Outline:Review of L31Carrier temperature and heat fluxHeterostructuresSummary

  20. Mesoscopic Simulations of Nitromethane

    22 Sep 2011 | | Contributor(s):: Jean-Bernard Maillet

    We present recent developments on the dissipative particle model that allow simulating the physico-chemical behavior of a molecular material at the mesoscale level. Several ingredients have been added to the previous model, in particular concerning the intermolecular force field and the...