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Ruslan Allayarov
https://nanohub.org/members/278942
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Thomas A Manz
Tom Manz is a Chemical & Materials Engineering faculty at New Mexico State University. His research group develops new computational chemistry methods and physical interaction models. He is the...
https://nanohub.org/members/222347
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Composite Filament Simulation 3D
15 Feb 2019 | | Contributor(s):: Zachary Yun, Michelle Zhang, Ganesh Vurimi, Hayden Taylor
Simulate electrical properties of a nanowire composite filament.
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jara siddika
staff, RUET
https://nanohub.org/members/214566
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Harshit Pandey
I'm a Final Year UG student pursuing B.Tech in Mechanical Engineering. I wish to pursue MS in Material Science and Engineering and further develop better materials for wide array of products...
https://nanohub.org/members/207057
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Applying Machine Learning to Computational Chemistry: Can We Predict Molecular Properties Faster without Compromising Accuracy?
14 Aug 2017 | | Contributor(s):: Hanjing Xu, Pradeep Kumar Gurunathan
Non-covalent interactions are crucial in analyzing protein folding and structure, function of DNA and RNA, structures of molecular crystals and aggregates, and many other processes in the fields of biology and chemistry. However, it is time and resource consuming to calculate such interactions...
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Steve Broadbent
https://nanohub.org/members/136957
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Sheng Ying Yue
https://nanohub.org/members/120281
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Zhao Li
https://nanohub.org/members/115622
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Zhichao Yang
https://nanohub.org/members/89859
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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
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Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
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Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
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Jul 23 2012
Illinois 2012: Summer School on Computational Materials Science Quantum Monte Carlo: Theory and Fundamentals
2012 Icon This school brings together scientists from the fields of geophysics, physics, materials science, chemistry and high-performance computing to learn fundamentals of Quantum Monte Carlo...
https://nanohub.org/events/details/336
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Manual for Archimedes, the GNU Monte Carlo simulator
25 Jun 2012 | | Contributor(s):: Jean Michel D Sellier
Please, feel free to download the manual of Archimedes.Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has been created by Jean Michel D. Sellier who is, since then, the leader of the project and the main...
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ECE 656 Lecture 34a: Monte Carlo Simulation I
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
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ECE 656 Lecture 34b: Monte Carlo Simulation II
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
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Bhupesh Bishnoi
https://nanohub.org/members/62512
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ECE 656 Lecture 32: Balance Equation Approach III
19 Jan 2012 | | Contributor(s):: Mark Lundstrom
Outline:Review of L31Carrier temperature and heat fluxHeterostructuresSummary
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Mesoscopic Simulations of Nitromethane
22 Sep 2011 | | Contributor(s):: Jean-Bernard Maillet
We present recent developments on the dissipative particle model that allow simulating the physico-chemical behavior of a molecular material at the mesoscale level. Several ingredients have been added to the previous model, in particular concerning the intermolecular force field and the...