Tags: MOS

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  1. ABACUS Tool Suite and MOS Capacitors (Fall 2023)

    19 Oct 2023 | | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip

  2. ECE 606 L28.1: MOS Electrostatics and MOScap - Background

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  3. ECE 606 L28.2: MOScap - Band Diagram in Equilibrium and with Bias -->MOS cap

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  6. ECE 606 L28.5: MOScap - Exact Solution of the Electrostatic Problem

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  7. ECE 606 L29.1: MOS Capacitor Signal Response - Introduction/Background

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  8. ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  9. ECE 606 L29.3: MOS Capacitor Signal Response - Large Signal Response

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  10. George Valentin Vintila

    https://nanohub.org/members/302756

  11. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...

    https://nanohub.org/wiki/EduSemiconductor2

  12. Ubuntu based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

  13. MOS Simulator

    25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

  14. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...

  15. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  17. Uniform Methodology of Benchmarking Beyond-CMOS Devices

    31 Oct 2012 | | Contributor(s):: Dmitri Nikonov

    Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...

  18. Nanoscale Transistors Lecture 4: MOS Electrostatics

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

  19. OMEN Nanowire: solve the challenge

    05 Feb 2011 | | Contributor(s):: SungGeun Kim

    This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

  20. Analytical and Numerical Solution of the Double Barrier Problem

    28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...