Online Presentations (1-20 of 28)

1. Thermal Transport in Layered Materials, Devices, and Systems

   11 Apr 2024 | | Contributor(s):: Eric Pop

   The thermal properties of layered materials (like graphene and MoS2) are an active area of investigation, particularly due to their anisotropic and tunable thermal conductivity. We have studied their behavior as part of transistors, where self-heating is a major challenge for performance and...

2. ABACUS Tool Suite and MOS Capacitors (Fall 2023)

   19 Oct 2023 | | Contributor(s):: Gerhard Klimeck

   In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip

3. ECE 606 L28.1: MOS Electrostatics and MOScap - Background

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

4. ECE 606 L28.2: MOScap - Band Diagram in Equilibrium and with Bias -->MOS cap

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

5. ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

6. ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

7. ECE 606 L28.5: MOScap - Exact Solution of the Electrostatic Problem

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

8. ECE 606 L29.1: MOS Capacitor Signal Response - Introduction/Background

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

9. ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response

   20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

10. ECE 606 L29.3: MOS Capacitor Signal Response - Large Signal Response

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

11. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...

12. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

13. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

14. Uniform Methodology of Benchmarking Beyond-CMOS Devices

    31 Oct 2012 | | Contributor(s):: Dmitri Nikonov

    Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...

15. Nanoscale Transistors Lecture 4: MOS Electrostatics

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

16. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    02 Mar 2010 | | Contributor(s):: Eric Pop

17. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | | Contributor(s):: Eric Pop

18. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | | Contributor(s):: Eric Pop

19. Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor

    02 Mar 2010 | | Contributor(s):: Eric Pop

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20. ECE 606 Lecture 33: MOS Electrostatics II

    out of 5 stars 

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam