Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
MOSCAP CV profiling
05 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra
This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.
MOSCap Learning Materials
By completing the MOSCap Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand the operation of a...
MOSCap: First-Time User Guide
30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
MOSCAP: Theoretical Exercise - High Frequency CV Curves
07 Jul 2009 | | Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
Saumitra Raj Mehrotra
Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization
23 Feb 2014 | | Contributor(s):: Alex Grede
Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.