
Notes on the Solution of the PoissonBoltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012   Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

MOSC VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
05 Feb 2012   Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOSCapacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

MOSC VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012   Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOSCapacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

SCHRED Exercise: MOS Capacitor Analysis
20 Jul 2010   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to examine the influence of semiclassical and quantummechanical charge description on the lowfrequency CVcurves. It also teaches one the influence of polygate depletion on the lowfrequency CVcurves.

Quantum Bound States Exercise
16 Jun 2010   Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Exercise BackgroundQuantummechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wavefunctions. One such system is a...

CV profile with different oxide thickness
20 Apr 2010   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
CV (or capacitancevoltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. CV testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.CV measurements can...

Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440: MOS Capacitor Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS CapacitanceVoltage Analysis.

Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.

MOSCAP: Theoretical Exercise  High Frequency CV Curves
07 Jul 2009   Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.

Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

MOSCap: FirstTime User Guide
30 Mar 2009   Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This firsttime user guide provides an introduction to MOSCap. The MOSCap tool simulates the onedimensional (along the growth direction) electrostatics in typical single and dualgate MetalOxideSemiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

MOSCAP  Theoretical Exercises 3
02 Aug 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck

MOSCAP  Theoretical Exercises 2
02 Aug 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck

MOSCAP  Theoretical Exercises 1
02 Aug 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck

MOS Capacitors: Theory and Modeling
18 Jul 2008   Contributor(s):: Dragica Vasileska
These slides can help users acquire a basic understanding of MetalOxideSemiconductor (MOS) capacitors.

Schred: Exercise 1
06 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semiclassically and quantummechanically is also examined since it is important...