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The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.
Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
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16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
CV profile with different oxide thickness
20 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to...
ECE 612 Lecture 3: MOS Capacitors
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09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
Exercise: CV curves for MOS capacitors
02 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also...
Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
Illinois ECE 440: MOS Capacitor Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
Illinois Tools: MOCA
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28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
MOS Capacitors: Theory and Modeling
18 Jul 2008 | Online Presentations | Contributor(s): Dragica Vasileska
These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012 | Teaching Materials | Contributor(s): Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org...
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
MOSCAP - Theoretical Exercises 1
02 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
MOSCAP - Theoretical Exercises 2
MOSCAP - Theoretical Exercises 3
MOSCap: First-Time User Guide
30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate...
MOSCAP: Theoretical Exercise - High Frequency CV Curves
07 Jul 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is
Quantum Bound States Exercise
16 Jun 2010 | Teaching Materials | Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Quantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying...