
MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015   Contributor(s):: Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the QV, CV, and IV characteristics of the conventional MOSFET and NCFET.

ECE 539 Report: Study of twodimensional ShrodingerPoisson Solver
01 Jun 2009   Contributor(s):: Fawad Hassan
We solve the 2Dimensional ShrodingerPoisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6valley bandstructure for Silicon.

MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006   Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metaloxidesemiconductor fieldeffect transistors (CNTMOSFETs) is simulated using the Nonequilibrium Green’s function formalism. A cylindrical transistor geometry with wrappedaround gate and doped source/drain regions are assumed. It should be noted that...

FETToy 2.0 Source Code Download
09 Mar 2005 
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic IV characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a...