Tags: MOSFET

More tags

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (101-120 of 153)

  1. MOSFET Design Calculations - Step 1

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  2. MOSFET Design Calculations - Step 1 (Instructor Copy)

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  3. MOSFET Design Calculations - Step 2

    05 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  4. MOSFET Design Calculations - Step 2

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  5. MOSFET Design Calculations - Step 2 (Instructor Copy)

    05 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  6. MOSFET Design Calculations - Step 2 (Instructor Copy)

    02 Jan 2011 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  7. MOSFET Design Calculations - Step 3

    01 Apr 2012 | | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  8. MOSFET Design Calculations - Step 3 (Instructor Copy)

    01 Apr 2012 | | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  9. MOSFET Design Simulation I

    07 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  10. MOSFET Design Simulation I (Instructor Copy)

    07 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  11. MOSFET Exercise

    out of 5 stars 

    07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

  12. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    out of 5 stars 

    31 Jan 2008 | | Contributor(s):: David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20,...

  13. MOSFET Lab - Scaling

    out of 5 stars 

    02 Jan 2011 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

  14. MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

    out of 5 stars 

    12 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.

  15. MOSFET Simulation

    out of 5 stars 

    04 Oct 2013 | | Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

  16. MOSFET Worked out problems 1

    out of 5 stars 

    06 Dec 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

  17. MOSFet: First-Time User Guide

    out of 5 stars 

    13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

  18. MSE 376 Lecture 12: Nanoscale CMOS, part 1

    out of 5 stars 

    31 Mar 2007 | | Contributor(s):: Mark C. Hersam

  19. MSE 376 Lecture 13: Nanoscale CMOS, part 2

    out of 5 stars 

    31 Mar 2007 | | Contributor(s):: Mark C. Hersam

  20. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    out of 5 stars 

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...