Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  2. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  3. MIT Virtual-Source Tool

    07 Aug 2012 | | Contributor(s):: Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

  4. Alok Ranjan

    https://nanohub.org/members/71877

  5. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

  6. Sabbir Ebna Razzaque

    https://nanohub.org/members/67938

  7. Tamer Elzayyat

    https://nanohub.org/members/67780

  8. MOSFET Design Calculations - Step 3

    01 Apr 2012 | | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  9. MOSFET Design Calculations - Step 3 (Instructor Copy)

    01 Apr 2012 | | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  10. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  11. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    26 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  12. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  13. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  14. MOSFET Design Simulation I

    06 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  15. MOSFET Design Simulation I (Instructor Copy)

    06 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  16. MOSFET Design Calculations - Step 2 (Instructor Copy)

    03 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  17. MOSFET Design Calculations - Step 2

    03 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  18. Ashish Kumar

    https://nanohub.org/members/64838

  19. kumar rohit

    https://nanohub.org/members/62042

  20. Silvaco Athena - Part 3

    05 Aug 2011 | | Contributor(s):: Dragica Vasileska

    This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.