Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    out of 5 stars 

    26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

  2. Convergence problem, take smaller steps

    Closed | Responses: 1

    I receive this error when running the MOSFET tool. Any one can suggest a solution

    https://nanohub.org/answers/question/1488

  3. cylindrical geometry for mosfet in PADRE

    Closed | Responses: 1

    how to define a cylindrical geometry for mosfet in padre?

    https://nanohub.org/answers/question/422

  4. How do I derive the 2D electron density used in nano MOSFET calculations?

    Open | Responses: 1

    In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by

    https://nanohub.org/answers/question/54

  5. How to see the occupation of electrons with strain

    Closed | Responses: 1

    How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.

    https://nanohub.org/answers/question/675

  6. how to simulate insulator in a GNRFET with matlab?

    Closed | Responses: 0

    I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...

    https://nanohub.org/answers/question/1583

  7. Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices

    Open | Responses: 1

    A sequel to this question is : Is Bambi simulator still available ??

    https://nanohub.org/answers/question/39

  8. Models for SETs in PSpice

    Closed | Responses: 0

      Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...

    https://nanohub.org/answers/question/1399

  9. Numerical work outs surface potential and capacitance of Mosfets in Matlab

    Open | Responses: 1

    how to work out surface potential and capacitance for Mosfets numerically in matlab?

    https://nanohub.org/answers/question/36

  10. relation between the si thickness and current

    Open | Responses: 1

    i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?

    https://nanohub.org/answers/question/272

  11. simulation does not give any result

    Closed | Responses: 0

    I simulated a n-type mosfet with following settings: device type mosfet n-type gaussian S/D doping density

    source/drain length: 50nm source/drain nodes: 15
    channel length: 35 https://nanohub.org/answers/question/771

  12. transfer characteristic

    Open | Responses: 2

    how the transfer characteristic of a mosfet depends on the channel doping?(theory)

    https://nanohub.org/answers/question/31

  13. What are the emerging trends in device modeling

    Closed | Responses: 0

    What are the emerging trends in device modeling? We have attained sun 45nm regime. what is beyond this? what research can be done further? any idea

    https://nanohub.org/answers/question/565

  14. A methodology for SPICE-compatible modeling of nanoMOSFETs

    out of 5 stars 

    17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

  15. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    out of 5 stars 

    04 Dec 2015 | | Contributor(s):: Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...

  16. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    out of 5 stars 

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

  17. ABACUS: Test for MOSFET Tool

    out of 5 stars 

    17 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

  18. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...

    https://nanohub.org/wiki/EduSemiconductor

  19. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    https://nanohub.org/members/38550

  20. Al Key

    Technology refresh

    https://nanohub.org/members/89988