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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 37: Radiation Induced Damage – An overview
20 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
Introduction and short history of radiation damage
Radiation damage in various types of components
Sources of radiation
A basic calculation and simulation...
ECE 695A Lecture 37R: Review Questions
Why is SOI more radiation hard compared to bulk devices? What do you feel about radiation hardness of FINFET?
What type of radiation issues could arise for thin-body...
ECE 695A Lecture 33: Model Selection/Goodness of Fit
18 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
The problem of matching data with theoretical distribution
Parameter extractions: Moments, linear regression, maximum likelihood
Goodness of fit: Residual, Pearson, Cox,...
ECE 695A Lecture 33R: Review Questions
With higher number of model parameters, you can always get a good fit – why should you minimize the number of parameters
Least square method is a subset of maximum...
ECE 695A Lecture 32R: Review Questions
17 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
Why do people use Normal, log-normal, Weibull distributions when they do not know the exact physical distribution?
What is the problem of using empirical distributions?...
ECE 695A Lecture 32: Physical vs. Empirical Distribution
Physical Vs. empirical distribution
Properties of classical distribution function
Moment-based fitting of data
ECE 695A Lecture 31R: Review Questions
15 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between parametric estimation vs. non-parametric estimation?
What principle did Tacho Brahe’s approach assume?
What is the difference between...
ECE 695A Lecture 31: Collecting and Plotting Data
Origin of data, Field Acceleration vs. Statistical Inference
Preparing data for projection: Hazen formula
Preparing data for projection: Kaplan...
ECE 695A Lecture 31A: Appendix - Bootstrap Method Introduction
ECE 695A Lecture 30R: Review Questions
08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between extrinsic vs. intrinsic breakdown?
Does gas dielectric have extrinsic breakdown? Why or why not?
What does ESD damage and the plasma damage to thin...
ECE 695A Lecture 30: Breakdown in Dielectrics with Defects
Theory of pre-existing defects: Thin oxides
Theory of pre-existing defects: thick oxides
ECE 695A Lecture 29R: Review Questions
Mention a few differences between thick and thin oxide breakdown.
Is breakdown in thick oxides contact dominated? Can I use AHI theory here?
How does the Paschen’s cascade...
ECE 695A Lecture 29A: Appendix - Dimension of a Surface
ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown
Part 1 - Understanding Post-BD FET behavior
BD position determination
Hard and Soft BD in FETs
Distinguishing leakage and intrinsic FET parameters shifts
Part 2 - Impact of...
ECE 695A Lecture 29: Breakdown of Thick Dielectrics
Spatial and temporal dynamics during breakdown
Breakdown in bulk oxides: puzzle
ECE 695A Lecture 27R: Review Questions
29 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains
28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Spatial vs. Temporal correlation
Theory of correlated Dielectric Breakdown
Excess leakage as a signature of correlated BD
ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)
Position and time correlation of BD spot
How to determine the position of the BD Spot
Position correlation in BD spots
Why is localization so weak?
ECE 695A Lecture 26R: Review Questions
Carbon-Based Nanoswitch Logic
28 Mar 2013 | Online Presentations | Contributor(s): Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude...