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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
A Comparative Study of nanoHUB Tools for the Simulation of Carbon-based FETs
03 Sep 2015 | | Contributor(s):: Jose M. de la Rosa
This work compares the different tools available in nanoHUB for the electrical simulation of carbon- based field-effect transistors made up of either carbon nanotubes (CNTs) or graphene. ...
Circuit Applications of Carbon Nanotube FETs
out of 5 stars
21 Apr 2004 | | Contributor(s):: Natasha Lynn Collier, Rand K. Jean, Saleem Kala, Patrick Ndai
2003 SURI Circuits Team abstracts and presentation slides. Please view each persons abstract linked below.
Comparisons of macrospin and OOMMF simulations
25 Jan 2010 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
Plots of switchign time of nanomagnets by spin torque calculated by macrospin model and micromagnetic tool OOMMF, compared side-by-side.D. E. Nikonov, G. I. Bourianoff, G. Rowlands, I. N. KrivorotovShould be read and cited in conjunction withhttp://arxiv.org/abs/1001.4578
Electronics at Nano scale
06 Apr 2007 | | Contributor(s):: Rakesh Kumar gupta
Current research on nanoelectronics is extremely diverse. Exiting technology of optical lithography used for the fabrication of electronics components,devices and systms already reached to their extreme limits. The devises with minimum feature dimensions less than 50nm and below this are almost...
Enhanced Pool Boiling Using Carbon Nanotube Arrays
21 Apr 2004 | | Contributor(s):: Sebastien Ujereh
2003 SURI Conference Proceeding
Feasibility of Molecular Assemblers
15 Aug 2004 | | Contributor(s):: LaDawn Biddle
Molecular manufacturing is expected to be the Industrial Revolution of the 21st century. Essentially all mechanized products are anticipated to be improved with the use of molecular assemblers.
Hydrodynamic Separation of Micron-sized Particles through Magnetization
16 Aug 2004 | | Contributor(s):: Michael Benko
Many assays and lab-on-a-chip projects require the use of uniform magnetic particles. Creating magnetic particles of uniform size and magnetization is a difficult task. The next best alternative is to make a distribution of particles and separate them.
Infrared Spectroscopy of Self-Assembled Monolayers
21 Apr 2004 | | Contributor(s):: Mac Inerowicz
Low Bias Transport in Graphene: An Introduction (lecture notes)
22 Sep 2009 | | Contributor(s):: Mark Lundstrom, tony low, Dionisis Berdebes
These notes complement a lecture with the same title presented by Mark Lundstrom and Dionisis Berdebes, at the NCN@Purdue Summer School, July 20-24, 2009.
Measurements of Interface Trap Density in MOS Capacitors Using AC Conductance Method
15 Aug 2004 | | Contributor(s):: Benafsha Shahlori
4-H SiC MOS capacitors have a broad interface state density located at approximately 2.9eV above the valence band edge. These states reduce mobility through carrier trapping which in turn affects the electrical performance of these devices. The ac conductance technique is used to measure...
Misinterpreting X-Ray Diffraction Results
03 Dec 2008 | | Contributor(s):: Thomas Key
Common mistakes and misinterpretations associated with the collection and interpretation of x-ray diffraction data.
Modification of Si(111) Surfaces using Self - Assembled Monolayers (SAMs) for Electrochemical and AF
16 Aug 2004 | | Contributor(s):: Rosangelly Flores Pérez
Recent researchers in the electrical engineering field are using self-assembled monolayers techniques with aryldiazonium salts solutions to build nanoelectronic devices. This innovation can explain the molecular conductivity and the chemical covalent bonds between π- conjugated orbitals of the...
Nanoelectronic Devices, With an Introduction to Spintronics (Lecture Notes)
01 Nov 2010 | | Contributor(s):: Supriyo Datta
Collective slides for the Datta lectures.
Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
23 Sep 2003 | | Contributor(s):: Victor Zhirnov
Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International Technology Roadmap for Semiconductors (ITRS). A wide range of new ideas have been proposed for...
Nanoscale Patterning of CdS/CdTe Solar Cells
21 Apr 2004 | | Contributor(s):: Cesar Lopez
2003 SURI Conference Proceedings
NCN Student Meet Presentations
11 Feb 2010 | | Contributor(s):: Abhijeet Paul, Ganesh Krishna Hegde, Ankit Jain, Fengyuan (Thomas) Li, Shuaib Salamat, Xufeng Wang, Insoo Woo, Robert Wortman, Min Xu, Ya Zhou
These are the presentations given by the students during the first 2010 event for NCN at Purdue. Students showcased a wide genre of research they are doing under the NCN. All the talks have been uploaded here for easy access.
NEGF theory of quantum photovoltaic devices
21 Sep 2011 | | Contributor(s):: Urs Aeberhard
Many high-efficiency photovoltaics concepts require an advanced control and manipulation of the optoelectronic properties of the active device structure, leading to a prominent role of low dimensional absorbers such as quantum wells, wires and dots in the implementation of these concepts....
Ordered Nanocrystalline Thin Films for High Efficiency CdS/CdTe Solar Cells
21 Apr 2004 | | Contributor(s):: Javier Gonzalez
Process Variation: An Evalution of Carbon Nanotube Transistor Field Effect Transistors
16 Aug 2004 | | Contributor(s):: Sergio Urban, Alvin Lacson, Louis Bonhami
Process variation is the observed deviation of device parameters in mass production processes. As the critical dimensions of today's MOSFET's are continously decreasing, process variation is becoming an increased problem.
Quantitative Modeling and Simulation of Quantum Dots
16 Jul 2010 | | Contributor(s):: Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted...