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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
19 Sep 2016 | | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
Tunnel FET Compact Model
11 Mar 2015 | | Contributor(s):: Hesameddin Ilatikhameneh, Tarek Ahmed Ameen (editor), Fan Chen (editor), Ramon Salazar, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman
Model Tunnel FETs based on analytic modeling and WKB method
Model Selection Using Gaussian Mixture Models and Parallel Computing
20 Jul 2016 | | Contributor(s):: Tian Qiu, Yiyi Chen, Georgios Karagiannis, Guang Lin
Model Selection Using Gaussian Mixture Models
A Short Overview of the NEEDS Initiative
05 Jun 2016 | | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
E304 L6.2.2: Nanoelectrics - Tunneling
15 Apr 2016 |
E304 L6.2.3: Nanoelectrics - Application: Single Electron Transistor
15 Apr 2016 | | Contributor(s):: Elena Nicolescu Veety
E304 L6.2.1: Nanoelectrics - Quantum Confinement
E304 L6.1.3: Nanoelectrics - Electron Concentration and Volume
Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices
26 Oct 2015 | | Contributor(s):: Da GUO, Tian Fang, Richard Akis, Dragica Vasileska
IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu- related metastabilities observed in CdTe solar cells . The evolution of CdTe...
Multi-Scale Modeling of Self-Heating Effects in Nano-Devices
01 Apr 2016 | | Contributor(s):: Suleman Sami Qazi, Akash Anil Laturia, Robin Louis Daugherty, Katerina Raleva, Dragica Vasileska
IWCE 2015 presentation. This paper discusses a multi-scale device modeling scheme for analyzing self-heating effects in nanoscale silicon devices. A 2D/3D particle-based device simulator is self-consistently coupled to an energy balance solver for the acoustic and optical phonon bath. This...
E304 L6.1.1: Nanoelectrics - Electron Energy Bands
Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Self-energies: Opening Doors for Nanotechnology
07 Apr 2016 | | Contributor(s):: Tillmann Christoph Kubis
In this talk, it will be shown how the concept of self-energies can be used to interface all these fields into the same nanotechnology modeling framework. Self-energies are most commonly used in the quantum transport method of nonequilibrium Green’s functions (NEGF). The NEGF method is...
Optoelectronic Spintronics and Quantum Photonics in 2D Materials
30 Mar 2016 | | Contributor(s):: John Schaibley
First, I will discuss the physics and applications of 2D heterostructures composed of stacked monolayers of MoSe_2 and WSe_2 . These heterostructures host interlayer valley excitons where the electrons and holes are located in different layers. These spatially indirect excitons exhibit long...
Piezotronics in 2D Piezoelectric Semiconductors
01 Apr 2016 | | Contributor(s):: Wenzhuo Wu
Monolayer MoS2 and other TMDCs have been theoretically predicted to exhibit piezoelectricity due to the strain induced lattice distortion and associated ion charge polarization, suggesting possible applications of these 2D nanomaterials in nano-scale electromechanical devices that take advantage...
Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires
17 Feb 2016 | | Contributor(s):: Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick
IWCE 2015 presentation. Abstract and more information to be added at a later date.
24 Feb 2016 | | Contributor(s):: Mark A. Reed
Here we report the observation of such a solid-state molecular device, in which transport current is directly modulated by an external gate voltage. We have realized a molecular transistor made from the prototype molecular junction, benzene dithiol, and have used a combination of spectroscopies...
On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
17 Feb 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....
Adventures with Oxide Interfaces: Electronics, Magnetism, Memory, Energy and Biology
24 Feb 2016 | | Contributor(s):: T. Venky Venkatesan
In this talk I share a personal close up view of the evolution of this field and where I see it going. I will cover polar/non-polar oxide interface conductivity, defect induced magnetism, FE tunnel junctions and some recent work on bio-oxide interfaces.