Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | Online Presentations | Contributor(s): Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however,...
NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
19 Sep 2016 | Online Presentations | Contributor(s): Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient...
Tunnel FET Compact Model
0.0 out of 5 stars
24 Aug 2016 | Tools | Contributor(s): Hesameddin Ilatikhameneh, Tarek Ahmed Ameen (editor), Fan Chen (editor), Ramon Salazar, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman
Model Tunnel FETs based on analytic modeling and WKB method
Model Selection Using Gaussian Mixture Models and Parallel Computing
27 Jul 2016 | Tools | Contributor(s): Tian Qiu, Yiyi Chen, Georgios Karagiannis, Guang Lin
Model Selection Using Gaussian Mixture Models
A Short Overview of the NEEDS Initiative
06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
E304 L6.2.2: Nanoelectrics - Tunneling
04 May 2016 | Online Presentations
E304 L6.2.3: Nanoelectrics - Application: Single Electron Transistor
03 May 2016 | Online Presentations | Contributor(s): Elena Nicolescu Veety
E304 L6.2.1: Nanoelectrics - Quantum Confinement
03 May 2016 | Online Presentations
E304 L6.1.3: Nanoelectrics - Electron Concentration and Volume
Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices
22 Apr 2016 | Online Presentations | Contributor(s): Da GUO, Tian Fang, Richard Akis, Dragica Vasileska
IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate...
Multi-Scale Modeling of Self-Heating Effects in Nano-Devices
21 Apr 2016 | Online Presentations | Contributor(s): Suleman Sami Qazi, Akash Anil Laturia, Robin Louis Daugherty, Katerina Raleva, Dragica Vasileska
IWCE 2015 presentation. This paper discusses a multi-scale device modeling scheme for analyzing self-heating effects in nanoscale silicon devices. A 2D/3D particle-based device simulator is...
E304 L6.1.1: Nanoelectrics - Electron Energy Bands
19 Apr 2016 | Online Presentations
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in...
Self-energies: Opening Doors for Nanotechnology
07 Apr 2016 | Online Presentations | Contributor(s): Tillmann Christoph Kubis
In this talk, it will be shown how the concept of self-energies can be used to interface all these fields into the same nanotechnology modeling framework. Self-energies are most commonly used in...
Optoelectronic Spintronics and Quantum Photonics in 2D Materials
07 Apr 2016 | Online Presentations | Contributor(s): John Schaibley
First, I will discuss the physics and applications of 2D heterostructures composed of stacked monolayers of MoSe_2 and WSe_2 . These heterostructures host interlayer valley excitons where the...
Piezotronics in 2D Piezoelectric Semiconductors
01 Apr 2016 | Online Presentations | Contributor(s): Wenzhuo Wu
Monolayer MoS2 and other TMDCs have been theoretically predicted to exhibit piezoelectricity due to the strain induced lattice distortion and associated ion charge polarization, suggesting...
Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires
24 Mar 2016 | Online Presentations | Contributor(s): Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick
IWCE 2015 presentation. Abstract and more information to be added at a later date.
16 Mar 2016 | Online Presentations | Contributor(s): Mark A. Reed
Here we report the observation of such a solid-state molecular device, in which transport current is directly modulated by an external gate voltage. We have realized a molecular transistor made...
On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
09 Mar 2016 | Online Presentations | Contributor(s): Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature...
Adventures with Oxide Interfaces: Electronics, Magnetism, Memory, Energy and Biology
25 Feb 2016 | Online Presentations | Contributor(s): T. Venky Venkatesan
In this talk I share a personal close up view of the evolution of this field and where I see it going. I will cover polar/non-polar oxide interface conductivity, defect induced magnetism, FE...