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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 22R: Review Questions
19 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
NEMO5 Latest Version Source
19 Mar 2013 | Downloads | Contributor(s): James Fonseca, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier
Revision 21229 updated on Sept 2, 2015.
Use this if you want to build NEMO5 from source.
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the name of the failure distribution that we expect for thin oxides?
For thin oxides, is PMOS or NMOS more of a concern in modern transistors?
What is DBIE? When...
ECE 595E Lecture 22: Full 3D Bandgaps
06 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel
Recap from Wednesday
3D Lattice Types
Full 3D Photonic Bandgap Structures
Rod-Hole 3D PhCs
ECE 595E Lecture 20: Bandstructure Concepts
Recap from Friday
Bandstructure Problem Formulation
Reciprocal Lattice Space
2D triangular lattice
ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Basic features of gate dielectric breakdown
Physical characterization of breakdown spot
Time-dependent defect generation
ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?
What is the relationship between Gauss and Tesla as units...
ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance
01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Importance of measuring interface damage
Electronic Spin Resonance ( A quick review)
Spin Dependent Recombination
Electrically detected spin-resonance and noise-...
ECE 695A Lecture 17R: Review Questions
What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?
Why do people like to use C-V techniques? What method would you use for HCI...
ECE 695A Lecture 18R: Review Questions
Between DCIV and CP methods, which one is easier and why?
In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?
What are the...
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Recall: Properties of Interface Defects
Flux-based method 1: Direct Current-Voltage method
Flux-based method 2: Charge pumping method
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between hot atom dissociation vs. cold atom dissociation?.
Many experiments are reported at 77K and 295K. Why these temperatures?.
Why is there such...
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?
What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....
ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Background and Empirical Observations
Theory of Hot Carriers: Hydrodynamic Model
Theory of Hot Carriers: Monte Carlo Model
Theory of Hot Carriers: Universal...
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?
What are the three methods of...
ECE 695A Lecture 15: Off-state HCI Degradation
ON vs. OFF State HCI Degradation
Origin of hot carriers at off-state
SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling