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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Landauer Approach to Thermoelectrics
23 Jun 2013 | Papers | Contributor(s): Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...
Introduction to Compact Models and Circuit Simulation
21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury
With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.
Introduction to Compact Models and Circuit Simulation
19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury
The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed...
Guidelines for Writing NEEDS-certified Verilog-A Compact Models
This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional...
19 Jun 2013 | Online Presentations | Contributor(s): Mark Lundstrom
NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform...
NEEDS Workshop on Compact Modeling
19 Jun 2013 | Workshops | Contributor(s): Mark Lundstrom, Jaijeet Roychowdhury
Advanced in research promise a new era of electronics – one that harnesses the capabilities of
Verilog-A: Present Status and Guidelines
19 Jun 2013 | Online Presentations | Contributor(s): Geoffrey Coram
Verilog-A is the standard language for compact model development and implementation.
This talk provides some background on the rationale for and development of Verilog-A,
summarizes the current...
nanoWind Installation files
10 Jun 2013 | Downloads | Contributor(s): Tianwei Liu, Joseph M. Cychosz
nanoWind is a Microsoft Office 2007 plugin designed to generate scripts for HUBpresenter using Final Cut XML, PowerPoint voice-narration or Adobe Presenter Project(aka. Breeze).
TEM Lattice Calculator
17 May 2013 | Tools | Contributor(s): Jamie Teherani
Calculate the lattice constant as a function of position from a TEM through Fourier analysis.
ECE 695A Lecture 37: Radiation Induced Damage – An overview
20 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
Introduction and short history of radiation damage
Radiation damage in various types of components
Sources of radiation
A basic calculation and simulation...
ECE 695A Lecture 37R: Review Questions
Why is SOI more radiation hard compared to bulk devices? What do you feel about radiation hardness of FINFET?
What type of radiation issues could arise for thin-body...
ECE 695A Lecture 33: Model Selection/Goodness of Fit
18 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
The problem of matching data with theoretical distribution
Parameter extractions: Moments, linear regression, maximum likelihood
Goodness of fit: Residual, Pearson, Cox,...