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Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Resources (21-40 of 1746)

  1. Berkeley Model Development Environment

    29 Sep 2013 | Tools | Contributor(s): Jaijeet Roychowdhury, Tianshi Wang

    Berkeley Model Development Environment

    https://nanohub.org/resources/mde

  2. Thermoelectric Power Generator System Optimization and Cost Analysis

    26 Sep 2013 | Tools | Contributor(s): Kaz Yazawa, Kevin Margatan, Je-Hyeong Bahk, Ali Shakouri

    Simulate cost and efficiency trade-off of a thermoelectric device as a function of material properties and heat transfer coefficients

    https://nanohub.org/resources/tedev

  3. LanTraP

    17 Sep 2013 | Tools | Contributor(s): Kyle Conrad, Jesse Maassen, Mark Lundstrom

    This tool calculates the distribution of modes, the electronic thermoelectric transport coefficients, and the lattice thermal transport properties from band structure information.

    https://nanohub.org/resources/lantrap

  4. Intro to MOS-Capacitor Tool

    09 Jan 2013 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential...

    https://nanohub.org/resources/mosctool

  5. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    https://nanohub.org/resources/18723

  6. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...

    https://nanohub.org/resources/18867

  7. Thin-Film and Multi-Element Thermoelectric Devices Simulator

    17 Jul 2012 | Tools | Contributor(s): Je-Hyeong Bahk, Megan Youngs, Zach Schaffter, Kazuaki Yazawa, Ali Shakouri

    Tool to simulate both micro-scale thin-film thermoelectric devices and large-scale multi-element thermoelectric modules for cooling and power generation

    https://nanohub.org/resources/thermo

  8. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    https://nanohub.org/resources/18690

  9. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    https://nanohub.org/resources/18694

  10. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    https://nanohub.org/resources/18697

  11. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    https://nanohub.org/resources/18705

  12. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    https://nanohub.org/resources/18707

  13. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | Papers | Contributor(s): Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...

    https://nanohub.org/resources/18733

  14. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    https://nanohub.org/resources/18738

  15. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    https://nanohub.org/resources/18740

  16. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    https://nanohub.org/resources/18742

  17. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    https://nanohub.org/resources/18744

  18. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    https://nanohub.org/resources/18747

  19. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    https://nanohub.org/resources/18763

  20. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    https://nanohub.org/resources/18765

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.